Publication:
Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC (2007)
Author(s): Mahapatra R, Chakraborty AK, Horsfall AB, Chattopadhyay S, Wright NG, Coleman KS
- Journal: Journal of Applied Physics
- Volume: 102
- Issue: 2
- Pages: 024105
- Publisher: American Institute of Physics
- Publication type: Article
- Bibliographic status: Published