Postgraduate Conference Abstract

Microelectronics

Potts, A

Breakdown Behaviour of U-Channel Silicon Carbide Mosfet Devices

The behaviour and performance of U-channel MOSFET's fabricated in 4H-SiC have been modelled and compared with planar MOSFET structures in similar material. The effects of trench size and profile on device performance, and in particular on the breakdown voltage and on-resistance, have been studies in order to optimise the device design.