Emerging Technology and Materials (ETM) Group: Research
Technology Computer Aided Design (TCAD)
Introduction
Technology Computer-Aided Design (TCAD) is a method used to rapidly explore and optimize novel process and device concepts. TCAD tools are used to predict:
- the physical structure of devices formed during a semiconductor fabrication process (process TCAD)
- the performance of the fabricated devices (device TCAD)
Industry uses TCAD extensively to reduce development costs and time to market. Predictive TCAD is made possible by developing simulation models that correctly describe the behaviour of materials and devices at the frontiers of technology.
Research in the ETM Group
The ETM group have developed some of the leading process TCAD models used worldwide. This is achieved by a combination of physical experiments, atomistic calculations, and basic theory. The resulting models are implemented in commercial software through a close cooperation with a leading TCAD software vendor. The models have been shown to predict device parameters for advanced CMOS, such as strained Si / SiGe technology, with minimal calibration. TCAD models have also been developed and used for optimization of c-Si photovoltaic (PV) technology.
The Group are interested in applying these models to full (process and device TCAD, up to 3-D) optimization of commercial c-Si PV technology.
Recent Awards
- Advanced technology modeling for extra-functionality devices (FP7)
- Newcastle University TCAD support to Narec PV Technology Centre (Narec)
Recent Papers/Proceedings
See below for some recent papers or proceedings in this area published by NME Group members. Please note you may need a subscription to view some of these articles.
- Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs
E.M. Bazizi, P.F. Fazzini, F. Cristiano, A. Pakfar, C. Tavernier, F. Payet, T. Skotnicki, C. Zechner, N. Zographos, D. Matveev, N.E.B. Cowern, N.S. Bennett, C. Ahn, and J.C. Yoon
Proc. International Electron Device Meeting 2010 (IEEE, 2010) - Integrated process and device 'TCAD' for enhancement of c-Si solar cell efficiency
C. Ahn, K. Drew, A. Cole, K.C. Heasman, L. Brown, and N.E.B. Cowern
Proc. EUPVSEC, Valencia, 2010 - Stress effects on impurity solubility in crystalline materials: A general model and density functional calculations for dopants in silicon
C. Ahn, N.S. Bennett, S.T. Dunham, and N.E.B. Cowern
Physical Review B 2009, 79, 073201 - Overlayer stress effects on defect formation in Si and Ge
N.E.B. Cowern, N.S. Bennett, C. Ahn, J.C. Yoon, S. Hamm, W. Lerch, H. Kheyrandish, F. Cristiano, and A. Pakfar
Thin Solid Films, 2009, 518, 2442
ETM Staff
More information on specific research activities in this area can be found as follows:
- Process simulation models for Technology Computer Aided Design (TCAD) of Si and SiGe based devices - Prof. Nick Cowern
