Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator (2006)

Author(s): Hamilton JJ, Collart EJH, Bersani M, Giubertoni D, Gennaro S, Bennett NS, Cowern NEB, Kirkby KJ

      • Date: 11-16 June 2006
      • Conference Name: Ion Implantation Technology Conference
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published