Publication

Theoretical investigations of the diffusion of nitrogen-pair defects in silicon (2005)

Author(s): Fujita N; Jones R; Goss JP; Frauenheim T; Oberg S; Briddon PR

      • Date: 25-30 September 2005
      • Conference Name: Gettering and Defect Engineering in Semiconductor Technology XI
      • Volume: 108-109
      • Pages: 407-412
      • Publisher: Uetikon-Zuerich
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

        Keywords: nitrogen defects silicon diffusion dislocation locking DISLOCATION LOCKING FLOAT-ZONE OXYGEN POINTS

        Staff

        Dr Jonathan Goss
        Lecturer