Publication

Defect identification in strained Si/SiGe heterolayers for device applications (2009)

Author(s): Escobedo-Cousin E, Olsen SH, O'Neill AG, Coulson H

      • Date: 01-09-2009
      • Journal: Journal of Physics D: Applied Physics
      • Volume: 42
      • Issue: 17
      • Pages: 6
      • Publisher: Institute of Physics Publishing Ltd.
      • Publication type: Article
      • Bibliographic status: Published

      Keywords: MISFIT DISLOCATIONS SI LAYERS SILICON HETEROSTRUCTURES RELAXATION THICKNESS INSULATOR MOBILITY GROWTH CMOS

      Staff

      Dr Enrique Escobedo-Cousin
      Research Associate

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics