Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs (2009)

Author(s): De Michielis L, Moselund K, Bouvet D, Dobrosz P, Olsen S, O'Neill A, Lattanzio L, Najmzadeh M, Selmi L, Ionescu A

      • Conference Name: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
      • Pages: 119-120
      • Publisher: IEEE
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics

      Dr Sarah Olsen
      Senior Lecturer