Publication

6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers (2010)

Author(s): Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C

      • Conference Name: Materials Science Forum: Silicon Carbide and Related Materials
      • Volume: 645-6648
      • Pages: 897-900
      • Publisher: Trans Tech Publications Ltd.
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published
      Staff

      Dr Alton Horsfall
      Reader in Semiconductor Technology

      Dr Konstantin Vasilevskiy
      Senior Research Associate