Publication

Quantum mechanical modeling of the structure and doping properties of defects in diamond (2005)

Author(s): Goss JP, Briddon PR, Sachdeva R, Jones R, Sque SJ

      • Date: 26-30 July 2004
      • Conference Name: 27th International Conference on the Physics of Semiconductors (ICPS)
      • Volume: 772
      • Pages: 91-94
      • Publisher: American Institute of Physics
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

        Keywords: BORON-DOPED DIAMOND N-TYPE DIAMOND SYNTHETIC DIAMOND AB-INITIO ELECTRICAL-CONDUCTIVITY NICKEL PSEUDOPOTENTIALS HYDROGEN DONORS IMPURITIES

        Staff

        Professor Patrick Briddon
        Professor of Computational Physics

        Dr Jonathan Goss
        Senior Lecturer