Publication

Elastic interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal (2007)

Author(s): Christmas UME, Faux DA, Cowern NEB

    Abstract: The strain interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal was modeled by a continuum Green's function method and by atomistic simulation. The interaction energy is proportional to d^−3, where d is separation distance between the defects. The pair interaction energy was found to be less than 0.04 meV for d > 6 nm increasing to more than about 0.1 meV for d < 3 nm. The energies are unlikely to influence the diffusional behavior of the defects except at distances of one or two unit cells. The potential between the point defects is repulsive if they are oriented along the (100) crystal axis, but attractive if they are positioned along (110) or (111).

      • Date: 13-11-2007
      • Journal: Physical Review B: Condensed Matter and Materials Physics
      • Volume: 76
      • Issue: 20
      • Pages: 205205
      • Publisher: American Physical Society
      • Publication type: Article
      • Bibliographic status: Published
      Staff

      Professor Nick Cowern
      Professor of Nanoscience / Nanotechnology