Publication
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon (2005)
Author(s): Ortiz CJ, Pichler P, Fuhner T, Cristiano F, Colombeau B, Cowern NEB, Claverie A
- Journal: Journal of Applied Physics
- Volume: 96
- Issue: 9
- Pages: 4866-4877
- Publisher: American Institute of Physics
- Publication type: Article
- Bibliographic status: Published