Publication

General model for intrinsic dopant diffusion in silicon, under nonequilibrium point defect conditions (1988)

Author(s): N.E.B. Cowern

      • Journal: Journal of Applied Physics
      • Volume: 64
      • Pages: 4484
      • Publication type: Article
      • Bibliographic status: Published
        Staff

        Professor Nick Cowern
        Professor of Nanoscience / Nanotechnology