Publication
Defect evolution and dopant activation anomalies in ion implanted silicon (2006)
Author(s): Cristiano F, Lamrani Y, Severac F, Gavelle M, Boninelli S, Cherkashin N, Marcelet O, Claverie A, Lerch W, Paul S, Cowern NEB, Duffy R
- Type of Article: Invited paper
- Date: 14-11-2006
- Journal: Nuclear Instruments and Methods in Physics Research B
- Volume: 253
- Issue: 1-2
- Pages: 68-79
- Publisher: Elsevier BV
- Publication type: Article
- Bibliographic status: Published