Defect evolution and dopant activation anomalies in ion implanted silicon (2006)

Author(s): Cristiano F, Lamrani Y, Severac F, Gavelle M, Boninelli S, Cherkashin N, Marcelet O, Claverie A, Lerch W, Paul S, Cowern NEB, Duffy R

    • Type of Article: Invited paper
    • Date: 14-11-2006
    • Journal: Nuclear Instruments and Methods in Physics Research B
    • Volume: 253
    • Issue: 1-2
    • Pages: 68-79
    • Publisher: Elsevier BV
    • Publication type: Article
    • Bibliographic status: Published