Publication

Cell geometry optimisation of 4H-SiC UMOSFETs by electrothernal simulation (1999)

Author(s): Wright NG, Johnson CM, O'Neill AG

      • Date: March 1999
      • Journal: Solid-State Electronics
      • Volume: 43
      • Issue: 3
      • Pages: 515-520
      • Publisher: Pergamon
      • Publication type: Article
      • Bibliographic status: Published
      Staff

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics