Publication

Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor (2001)

Author(s): Ortolland S, Wright NG, Johnson CM, Knights AP, Coleman PG, Burrows CP, Pidduck AJ

    Notes: Originally presented at: the Third European Conference on Silicon Carbide and Related Materials (ECSCRM2000), held September 3-7, 2000 in Kloster Banz, Germany

      • Journal: Materials Science Forum
      • Volume: 353-356
      • Pages: 567-570
      • Publisher: Trans Tech Publications Ltd
      • Publication type: Article
      • Bibliographic status: Published
      Staff

      Professor Nick Wright
      Pro-Vice-Chancellor