Publication

Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology (2000)

Author(s): Coleman AP, Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Phelps GJ, Knights PG, Burrows CP

    Notes: Published Abstract: 2001 in book form.

      • Date: 27-29 November 2000
      • Conference Name: Silicon Carbide - Materials, Processing and Devices: Symposium
      • Volume: 640
      • Pages: H5.30.1-5
      • Publisher: Materials Research Society
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published
        Staff

        Dr Alton Horsfall
        Reader in Semiconductor Technology

        Professor Anthony O'Neill
        Siemens Professor of Microelectronics