Publication

3D determination of a MOSFET gate morphology by FIB tomography (2004)

Author(s): Olsen S; O'Neill AG; Inkson BJ; Norris DJ; Mobus G

    Abstract: The 3D morphology of the gate electrode in a Si-Ge MOSFET device has been determined by 3D FIB tomographic analysis. Sequential 2D FIB sectioning, imaging, and computer reconstruction enables the gate electrode shape and location with respect to the neighbouring source and drain to be determined in 3D. (11 References).

    Notes: Cullis AG Midgley PA Bristol, UK. Microscopy of Semiconducting Materials Conference. Cambridge, UK. 31 March-3 April 2003.

      • Date: 31 March - 3 April 2003
      • Conference Name: Microscopy of Semiconducting Materials Conference
      • Volume: 180
      • Pages: 611-616
      • Publisher: Institute of Physics
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published
        Staff

        Professor Anthony O'Neill
        Siemens Professor of Microelectronics

        Dr Sarah Olsen
        Senior Lecturer