Publication

4H-SiC rectifiers with dual metal planar Schottky contacts (2002)

Author(s): Wright NG; Vassilevski KV; O'Neill AG; Horsfall AB; Johnson CM

      • Journal: IEEE Transactions on Electron Devices
      • Volume: 49
      • Issue: 5
      • Pages: 947-949
      • Publisher: IEEE
      • Publication type: Article
      • Bibliographic status: Published
      Staff

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics

      Dr Konstantin Vasilevskiy
      Senior Research Associate

      Professor Nick Wright
      Pro-Vice-Chancellor