Publication

Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes (2002)

Author(s): Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM

      • Conference Name: International Conference on Silicon Carbide and Related Materials
      • Volume: 389-393
      • Pages: 1149-1152
      • Publisher: Materials Science Forum, Trans Tech Publications
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published
        Staff

        Professor Anthony O'Neill
        Siemens Professor of Microelectronics

        Dr Konstantin Vasilevskiy
        Senior Research Associate

        Professor Nick Wright
        Pro-Vice-Chancellor