Publication

Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation (2006)

Author(s): Uppal S; Varzgar JB; Kanoun M; Chattopadhyay S; Olsen SH; O'Neill AG

      • Date: 29 May - 2 June 2006
      • Conference Name: Materials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference
      • Volume: 135 (3)
      • Pages: 207-209
      • Publisher: Elsevier SA
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published
        Staff

        Professor Anthony O'Neill
        Siemens Professor of Microelectronics