Publication

Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer (2006)

Author(s): Varzgar JB; Kanoun M; Uppal S; Chattopadhyay S; Chandra P; Olsen SH; O'Neill AG; Hellstron P-E; Edholm J; Ostling M; Lyutovich K; Oehme M; Kasper E

      • Date: 29 May - 2 June 2006
      • Conference Name: Materials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference
      • Volume: B135
      • Pages: 203-206
      • Publisher: Elsevier SA
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published
        Staff

        Professor Anthony O'Neill
        Siemens Professor of Microelectronics