Structure and Electronic Properties of Nitrogen Defects in Silicon (2004)

Author(s): Jones R, Hahn I, Goss JP, Briddon PR, Oberg S

      • Journal: Diffusion and Defect Data Pt.B: Solid State Phenomena
      • Volume: 95-96
      • Pages: 93-98
      • Publisher: Scitec Publications Ltd.
      • Publication type: Article
      • Bibliographic status: Published
      • ISSN (electronic):

      Professor Patrick Briddon
      Professor of Computational Physics

      Dr Jonathan Goss
      Senior Lecturer