Publication

A first principles study of interstitial Si in diamond (1997)

Author(s): J. P. Goss, R. Jones, S. J. Breuer, P. R. Briddon and S. Öberg

  • : A first principles study of interstitial Si in diamond

Notes: Part 1-3

  • Short Title: A first principles study of interstitial Si in diamond
  • Conference Name: Defects in Semiconductors - ICDS-19, Pts 1-3
  • Volume: 258-2
  • Pages: 781-786
  • Publication type: Conference Proceedings (inc. abstract)
  • Bibliographic status: Published
    Staff

    Dr Jonathan Goss
    Lecturer