Publication

Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method (2006)

Author(s): Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH

    Notes: Article no. 034501 8 pages

      • Journal: Journal of Applied Physics
      • Volume: 99
      • Issue: 3
      • Pages: 034501
      • Publisher: American Institute of Physics
      • Publication type: Article
      • Bibliographic status: Published
      Staff

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics