Newcastle University

Publication

Study of surface roughness and dislocation generation in strained Si layers grown on thin strain-relaxed buffers for high performance MOSFETs (2006)

Author(s): Escobedo-Cousin E; Olsen SH; Bull SJ; O'Neill AG; Coulson H; Claeys C; Loo R; Delhougne R; Caymax M

• Conference Name: Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
• Pages: 1-2
• Publisher: IEEE Press
• Publication type: Conference Proceedings (inc. abstract)
• Bibliographic status: Published

• URL: http://dx.doi.org/10.1109/ISTDM.2006.246495
• DOI: 10.1109/ISTDM.2006.246495