Publication

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs (2006)

Author(s): Dalapati GK; Chattopadhyay S; Kwa KSK; Olsen SH; Tsang YL; Agaiby R; O'Neill AG; Dobrosz P; Bull SJ

      • Journal: IEEE Transactions on Electron Devices
      • Volume: 53
      • Issue: 5
      • Pages: 1142-1152
      • Publisher: IEEE
      • Publication type: Article
      • Bibliographic status: Published
      Staff

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics

      Dr Sarah Olsen
      Senior Lecturer