Publication

Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes (2002)

Author(s): Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM

      • Date: 28 October - 2 November 2001
      • Conference Name: International Conference on Silicon Carbide and Related Materials
      • Volume: 389-3
      • Pages: 1149-1152
      • Publisher: Trans Tech Publications Ltd.
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

      Keywords: breakdown guard rings implantation Schottky diodes SILICON-CARBIDE

      Staff

      Dr Alton Horsfall
      Reader in Semiconductor Technology

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics

      Dr Konstantin Vasilevskiy
      Senior Research Associate