Publication

Structuralstability of strained Si layers on thin strain-relaxed buffers for high performance MOSFETs (2006)

Author(s): Escobedo-Cousin E; Olsen SH; Bull SJ; O'Neill AG; Coulson H; Claeys C; Loo R; Delhougne R; Caymax M

      • Date: 15-17 May 2006
      • Conference Name: 3rd International Silicon-Germanium Device and Technology Meeting (ISTDM 2006)
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published
      Staff

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics