Newcastle University

Publication

Optimisation of a 4H-SiC enhancement mode power JFET (2002)

Author(s): Horsfall AB, Johnson CM, Wright NG, O'Neill AG

• Date: 2-5 September 2002
• Conference Name: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM)
• Volume: 433-4
• Pages: 777-780
• Publisher: Trans Tech Publications Ltd.
• Publication type: Conference Proceedings (inc. abstract)
• Bibliographic status: Published

• URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.777
• DOI: 10.4028/www.scientific.net/MSF.433-436.777

Keywords: enhancement mode junction field effect transistors optimisation TCAD simulation

Staff

Dr Alton Horsfall Reader in Semiconductor Technology	Email: alton.horsfall@ncl.ac.uk Telephone: +44 (0) 191 222 7341
Professor Anthony O'Neill Siemens Professor of Microelectronics	Email: anthony.oneill@ncl.ac.uk Telephone: +44 (0) 191 222 7328
Professor Nick Wright Pro-Vice-Chancellor	Email: nick.wright@ncl.ac.uk Telephone: +44 (0) 191 222 7701