Optimisation of a 4H-SiC enhancement mode power JFET (2002)

Author(s): Horsfall AB, Johnson CM, Wright NG, O'Neill AG

      • Date: 2-5 September 2002
      • Conference Name: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM)
      • Volume: 433-4
      • Pages: 777-780
      • Publisher: Trans Tech Publications Ltd.
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

      Keywords: enhancement mode junction field effect transistors optimisation TCAD simulation


      Dr Alton Horsfall
      Reader in Semiconductor Technology

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics