Publication

Stacking fault - Stacking fault interactions and cubic inclusions in 6H-SiC: an ab initio study (2002)

Author(s): Iwata H, Lindefelt U, Oberg S, Briddon PR

  • : Materials Science Forum
  • Short Title: Materials Science Forum
  • Date: 2-5 September 2002
  • Conference Name: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM)
  • Volume: 433-4
  • Pages: 921-924
  • Publisher: Trans Tech Publications Ltd.
  • Publication type: Conference Proceedings (inc. abstract)
  • Bibliographic status: Published

Keywords: 6H-SiC first-principles calculation polytype inclusions stacking faults 4H-SIC P(+)/N(-)/N(+) DIODES SILICON-CARBIDE SINGLE-CRYSTALS POLYTYPIC TRANSFORMATIONS DEFECTS MICROSCOPY

Staff

Dr Patrick Briddon
Senior Lecturer