Publication

Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si (2003)

Author(s): Coutinho J, Andersen O, Dobaczewski L, Nielsen KB, Peaker AR, Jones R, Oberg S, Briddon PR

      • Date: 01-11-2003
      • Journal: Physical Review B
      • Volume: 68
      • Issue: 18
      • Pages: 184106
      • Publisher: American Physical Society
      • Publication type: Article
      • Bibliographic status: Published

      Keywords: ELECTRON-PARAMAGNETIC-RESONANCE IRRADIATED SILICON DOPED SILICON A-CENTER DEFECTS CENTERS IDENTIFICATION SEMICONDUCTORS DIVACANCY

      Staff

      Dr Patrick Briddon
      Senior Lecturer