Publication

Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation (2004)

Author(s): Vassilevski K, Horsfall AB, Johnson CM, Wright NG

      • Date: 5-10 October 2003
      • Conference Name: 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003)
      • Volume: 457-460
      • Pages: 989-992
      • Publisher: Materials Science Forum: Trans Tech Publications Ltd
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

      Keywords: edge termination guard rings Boron ion implantation Schottky diodes N-DIODES DESIGN FIELD

      Staff

      Dr Alton Horsfall
      Reader in Semiconductor Technology

      Dr Konstantin Vasilevskiy
      Senior Research Associate

      Professor Nick Wright
      Pro-Vice-Chancellor