Publication

Implanted bipolar technology in 4H-SiC (2000)

Author(s): Wright NG; Ortolland S; ONeill AG; Horsfall A; Adachi K; Johnson CM; Knights AP; Coleman PG

  • : Implanted bipolar technology in 4H-SiC

Abstract: A simple ion-implanted bipolar transistor technology in 4H-SiC is presented. Suitable for both high-voltage vertical devices and lateral high-temperature transistors (for circuit applications), the technology is based on an implanted boron p-well with nitrogen and boron (or aluminium) implanted n+ and p+ regions respectively. The effects of base doping and carrier lifetime on device performance have been studied using TCAD techniques. It is shown that understanding the strong variation of carrier concentration with temperature (due to deep activation levels) and applied field (so-called field ionization) is critical in device design optimisation. The effects of post-implant anneal conditions on the physical and electrical characteristics of the junctions are investigated. It is shown that annealing can remove much of the damage induced by high dose nitrogen implantation but that residual damage is still present. The electrical characteristics of simple BJT transistors with breakdown voltages in excess of 1000V and common-emitter gains of ~2 are related to the level of such residual damage. (6 References).

Notes: Shul RJ Ren F Pletschen W Murakami M 7.1-6. Warrendale, PA, USA. Wide-Bandgap Electronic Devices. Symposium. San Francisco, CA, USA. 24-27 April 2000.

  • Short Title: Implanted bipolar technology in 4H-SiC
  • Date: 30 May - 2 June 2000
  • Conference Name: Wide-Bandgap Electronic Devices. Symposium (Materials Research Society Symposium Proceedings)
  • Volume: 622
  • Pages: T1-T7
  • Publisher: Materials Research Society
  • Publication type: Conference Proceedings (inc. abstract)
  • Bibliographic status: Published
Staff

Professor Anthony O'Neill
Siemens Professor of Microelectronics

Professor Nick Wright
Pro-Vice-Chancellor