Publication

Double implanted power MESFET technology in 4H-SiC (2000)

Author(s): Horsfall AB, Ortolland S, Wright NG, Johnson CM, Knights AP

      • Date: 3-7 September 2000
      • Conference Name: The 3rd European Conference on Silicon Carbide and Related Materials 2000
      • Volume: 353-356
      • Pages: 707-710
      • Publisher: Trans Tech Publications
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

      Keywords: annealing ion implantation MESFET roughness

      Staff

      Dr Alton Horsfall
      Reader in Semiconductor Technology