Newcastle University

Background

Dr Alton Horsfall joined the department in August 1999 as a research associate developing high temperature power electronics using silicon carbide. He previously completed his degree and Ph.D. at the physics department at the University of Durham where he investigated the effect of quantum mechanical exchange mechanisms in diluted magnetic semiconductors at mK temperatures. Alton then worked for the Defence Evaluation and Research Agency before moving to Newcastle.  During his time at the University he spent nine months on a Royal Academy of Engineering secondment to BAE Systems Submarine Solutions in Barrow in Furness, where he worked as part of the Instrumentation and Calibration Services team.

He is currently Reader in Semiconductor Technology and is leading the research into resilient electronic systems for high temperature hostile environments, such as those found in aerospace, defence and oil and gas exploration.  In addition to his continued work on power electronic systems, he is developing a variety of sensor based circuits, which can selectively detect a range of pollutant gases at temperatures above 300C, as well as communications systems. His research is supported by a number of industrial collaborators, including BAE Systems and Raytheon UK, as well as EPSRC.

To date he has won four best paper prizes, the IEEE International Conference on Microelectronic Test Structures (2004), the IEEE Power Electronics Conference at Illinois (2012), the deBeers Diamond Conference (2012) and IEEE Sensors (2012)

Alton is a member of the Emerging Technology and Materials research group and his profile can be viewed on  Google Scholar.

Research Interests

By utilising novel semiconductor materials, including graphene, silicon carbide, diamond and molybdenum disulphide, research is investigating the possibility of placing electronic devices and circuits in hostile environments from jet engines to volcanoes and nuclear reactors to outerspace.  Recent developments include wireless communications operating at over 300C, highly responsive gas and solvent sensors and energy harvesting technologies.  Projects involve aspects of materials science, device design and fabrication, simulation and test to understand how the desired device characteristics can be realised from these materials.  Projects are often in conjunction with leading UK companies, including BAE Systems, Raytheon UK, Rolls Royce and Dynex Semiconductors.

Potential PhD Research Projects

• Active Sensors for Extreme Environments
• Novel sensors utilising two dimensional semiconductors, MoS2 and graphene
• Gas sensors for real time analysis of the Venus atmosphere
  
• Current limiting devices for aerospace applications
  
• JFET / CMOS integration for high fidelity instrumentation in extreme environments
  
• Ultra high efficiency power converters using silicon carbide technology

Projects

• A detector for all seasons: towards SiC imaging arrays
  Project Leader(s): Dr Alton Horsfall
• Active Sensor Structures for Extreme Environments
  Project Leader(s): Dr A.B. Horsfall
• BAE Case Studentship - Hassan Habib
• BAE Studentship 1 & 2
  Project Leader(s): Dr Alton Horsfall
• Delta Doped SiC MOSFET Optimisation
• Development of Silicon Carbide X-Ray Detectors for Remote Sensing Planetary Missions
  Project Leader(s): Dr Alton Horsfall
• EXTREME Project
  Project Leader(s): Prof. N. G. Wright
• High K Gas Sensors
  Project Leader(s): Dr Alton Horsfall
• IeMRC Flagship Project in Power Electronic Systems
• MOSFET
  Project Leader(s): Dr Alton Horsfall
• Platform Grant: Technologies for SiC Electronics and Sensors in Extreme Environments
  Project Leader(s): Prof. Nick Wright
• PULLNANO - Pulling the Limits of Nanoelectronics
  Project Leader(s): Prof. Anthony O'Neill
• Reliability of silicon carbide transistors for hostile environment applications
  Project Leader(s): Dr A.B. Horsfall
• Resilient Sensors for Nuclear Decommissioning and Waste Storage
• Silicon Carbide for High Power and High Temperature Applications (SCEPTRE)
  Project Leader(s): Dr C.M. Johnson
• Silicon Carbide Sensors for Space Applications.
• Stress Evolution in Electrically Stressed Interconnect Features.
• Study into design of resilient circuits in Silicon (Matthew Cunningham)
  Project Leader(s): Dr A.B. Horsfall

Undergraduate Teaching

EEE1009 - Communications and Innovation

EEE3016 - Optoelectronics

PHY3010 - Fundamental Physics IIIB

Postgraduate Teaching

EEE8010 - Optoelectronics

Project Supervision

Stage 2 buggy team, stage 3 undergraduate and MSc projects in semiconductor technology

Coursework Projects

Study projects in artificial neuronal circuits and extended coursework in resilient optical communication systems

• Nagareddy VK, Nikitina IP, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Horsfall AB. High temperature measurements of metal contacts on epitaxial graphene. Applied Physics Letters 2011, 99(7), 073506.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC Schottky diodes with high on/off current ratio. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Blasciuc-Dimitriu C, Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG. Characterisation of the high temperature performance of 4H-SiC Schottky barrier diodes. In: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
• Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM. Enhanced dopant diffusion effects in 4H silicon carbide. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Horsfall AB, Johnson CM, Wright NG, O'Neill AG. Optimisation of a 4H-SiC enhancement mode power JFET. In: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
• Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM. Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Johnson CM, Rahimo M, Wright NG, Hinchley DA, Horsfall AB, Morrison DJ. Characterisation of 4H-SiC Schottky diodes for IGBT applications. In: Industry Applications Conference 2000. Conference Record of the 2000 IEEE. 2000, Rome, Italy: Institution of Electronic and Electrical Engineers.
• Horsfall AB, Ortolland S, Wright NG, Johnson CM, Knights AP. Double implanted power MESFET technology in 4H-SiC. In: The 3rd European Conference on Silicon Carbide and Related Materials 2000. 2000, Kloster Banz, Germany: Trans Tech Publications.
• Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Knights AP, Coleman PG. Implanted bipolar technology in 4H-SiC. In: 2000 MRS Spring Meeting Proceedings: Wide-Bandgap Electronic Devices. Symposium. 2000, San Francisco, CA, USA: Materials Research Society.
• Coleman AP, Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Phelps GJ, Knights PG, Burrows CP. Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology. In: Silicon Carbide - Materials, Processing and Devices: Symposium. 2000, Boston, MA, USA: Materials Research Society.
• Vassilevski K, Nikitina I, Horsfall AB, Wright NG, Johnson CM. 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Stevens RC, Vassilevski K, Lees JE, Wright NG, Horsfall AB. Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-ray Detectors. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Goss JP, Briddon PR, Nagareddy VK, Wright NG, Horsfall AB, Caldwell JD, Gaskill DK, Jernigan GG. Influence of intercalated silicon on the transport properties of graphene. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Furnival BJD, Vassilevski K, Wright NG, Horsfall AB. Recovery of Ohmic Contacts Formed on C-face 4H-SiC Following High Temperature Post-Processing. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Vassilevski K, Nikitina I, Horsfall AB, Wright NG, Smith AJ, Johnson CM. Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Weng MN, Barker S, Mahapatra R, Furnival BJD, Wright NG, Horsfall AB. Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Chen CC, Horsfall AB, Wright NG, O'Neill AG. Optimisation of Heterostructure Bipolar Transistors in SiC. Materials Science Forum 2005, 483-485, 913-916.
• Soare S, Bull SJ, Oila A, O'Neill A, Wright N, Horsfal A, dos Santos J. Determination of mechanical parameters for rotating MEMS as a function of deposition method. In: Thin Films: Stresses and Mechanical Properties X. 2003, Boston, Massachusetts, USA: Materials Research Society Symposium.
• Soare S, Bull SJ, Oila A, O'Neill AG, Wright N, Horsfall A, Dos Santos J. Determination of mechanical parameters for rotating MEMS structures as a function of deposition method. In: Materials Research Society Symposium Proceedings: Thin Films - Stresses and Mechanical Properties X. 2003, Boston, Massachusetts, USA: Materials Research Society.
• Horsfall AB, Johnson CM, Wright NG, O'Neill AG. Optimisation of a 4H-SiC enhancement mode power JFET. In: Materials Science Forum: 4th European Conference on Silicon Carbide and Related Materials. 2003, Linkoping, Switzerland: Trans Tech Publications Ltd.
• Johnson CM, Rahimo M, Wright NG, Hinchley DA, Horsfall AB, Morrison DJ, Knights A. 1.6 kV 4H-SiC Schottky diodes for IGBT applications. In: Eighth International Conference on Power Electronics and Variable Speed Drives, 2000. 2000, Piscataway, USA: Institution of Electronic and Electrical Engineers.
• Morrison DJ, Wright NG, Horsfall AB, Johnson CM, O'Neill AG, Knights AP, Hilton KP, Uren MJ. Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation. Solid-State Electronics 2000, 44(11), 1879-1885.
• Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C. 6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers. In: Materials Science Forum: Silicon Carbide and Related Materials. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Brennan D, Miao B, Vasilevskiy K, Wright N, Horsfall A. Amplitude shift keyed radio communications for hostile environments. In: Materials Science Forum: Silicon Carbide and Related Materials. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Goss J, Briddon P, Wright N, Horsfall A. Density functional simulations of physisorbed and chemisorbed single graphene layers on 4H-SiC (0001), (0001̄) and 4H-SiC:H surface. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Smith S, Brockie N, Murray J, Wilson C, Horsfall A, Terry J, Stevenson J, Mount A, Walton A. Fabrication of test structures to monitor stress in SU-8 films used for MEMS applications. In: IEEE International Conference on Microelectronic Test Structures. 2010, Hiroshima, Japan: IEEE.
• Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C. Growth of few layers graphene on silicon carbide from nickel silicide supersaturated with carbon. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Barker S, Vassilevski KV, Wright NG, Horsfall AB. High Temperature Vibration Energy Harvester System. In: IEEE Sensors. 2010, Waikoloa, Hawaii, USA: IEEE.
• Barker S, Miao B, Brennan D, Vassilevski K, Wright N, Horsfall A. Silicon carbide based energy harvesting module for hostile environments. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Wright NG, Poolamai N, Vassilevski K, Horsfall AB, Johnson CM. Benefits of high-k dielectrics in 4H-SIC trench MOSFETs. In: 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). 2004, Lyon, France: Materials Science Forum: Trans Tech Publications Ltd.
• Soare S, Bull SJ, Oila A, O'Neill A, Wright N, Horsfall A, dos Santos J. Determination of mechanical parameters for rotating MEMS structures as a function of deposition method. In: MRS Fall Meeting 2003. 2004, Boston, Massachusetts, USA.
• Vassilevski K, Horsfall AB, Johnson CM, Wright NG. Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation. In: 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). 2004, Lyon, France: Materials Science Forum: Trans Tech Publications Ltd.
• B-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. First principles derivation of carrier transport across metal - SiC barriers. In: Materials Science Forum: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2004, Lyon, France: Trans Tech Publications Ltd.
• Vassilevski KV, Zekentes K, Horsfall AB, Johnson CM, Wright NG. Low voltage silicon carbide zener diode. In: Materials Science Forum: 10th International Conferece on Silicon Carbide and Related Materials (ICSCRM). 2004, Lyon, France: Trans Tech Publications Ltd.
• Miao B, Mahapatra R, Jenkins R, Silvie J, Wright NG, Horsfall AB. Radiation Induced Change in Defect Density in HfO2-Based MIM Capacitors. IEEE Transactions on Nuclear Science 2009, 56(5), 2916-2924.
• Weng M-H, Mahapatra R, Horsfall AB, Wright NG. Trap-assisted gas sensing mechanism in Pd/TiO2/SiO 2/SiC capacitors at high temperatures. IEEE Sensors Journal 2007, 7(10), 1395-1399.
• Wright NG, Horsfall AB. SiC sensors: A review. Journal of Physics D: Applied Physics 2007, 40(20), 6345-6354.
• Wilson CJ, Horsfall AB, O'Neill AG, Wright NG, Bull SJ, Terry JG, Stevenson JTM, Walton AJ. Direct measurement of electromigration-induced stress in interconnect structures. IEEE Transactions on Device and Materials Reliability 2007, 7(2), 356-362.
• Blasciuc-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. Quantum modelling of I-V characteristics for 4H-SiC Schottky barrier diodes. Semiconductor Science and Technology 2005, 20(1), 10-15.
• Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Zekentes K, Johnson CM. Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiC. Semiconductor Science and Technology 2009, 24(5), 055006.
• Mahapatra R, Chakraborty AK, Horsfall AB, Wright NG, Beamson G, Coleman KS. Energy-band alignment of HfO₂/SiO₂/SiC gate dielectric stack. Applied Physics Letters 2008, 92(4), 042904.
• Miao B, Mahapatra R, Wright N, Horsfall A. The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors. Journal of Applied Physics 2008, 104(5), 054510.
• Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Bose C, Maiti CK. Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes. Journal of Applied Physics 2006, 99(11), 113707.
• dos Santos JMM, Wang K, Horsfall AB, Pina JCP, Wright NG, O'Neill AG, Soare SM, Bull SJ, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. Calibration of MEMS-based test structures for predicting thermomechanical stress in integrated circuit interconnect structures. IEEE Transactions on Device and Materials Reliability 2005, 5(4), 713-719.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Bromine functionalisation of diamond: An ab initio study. Physica Status Solidi A 2012, 209(9), 1703-1708.
• Tiwari AK, Goss JP, Briddon P, Wright NG, Horsfall AB. Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces. Materials Science Forum 2012, 717-720, 1311-1314.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Effect of different surface coverages of transition metals on the electronic and structural properties of diamond. Physica Status Solidi A 2012, 209(9), 1697-1702.
• Pinto H, Jones R, Palmer DW, Goss JP, Tiwari AK, Briddon PR, Wright NG, Horsfall AB, Rayson MJ, Oberg S. First-principles studies of the effect of (001) surface terminations on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond. Physical Review B 2012, 86(4), 045313.
• Mahapatra R, Horsfall AB, Wright NG. Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal-Insulator-Metal Devices. Journal of Electronic Materials 2012, 41(4), 656-659.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Jones R, Pinto H, Rayson MJ. Thermodynamic stability and electronic properties of F- and Cl-terminated diamond. Physica Status Solidi A 2012, 209(9), 1709-1714.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Jones R, Pinto H, Rayson MJ. Calculated electron affinity and stability of halogen-terminated diamond. Physical Review B 2011, 84(24), 245305.
• Furnival BJD, Wright NG, Horsfall AB. Discriminating Gas Concentrations in Extreme Temperature Environments. In: IEEE Sensors. 2011, Limerick, Ireland: IEEE.
• Al Hinai M, Wright N, Horsfall A, Hassanien R, Horrocks B, Houlton A. Ultra-sensitive hydrogen gas sensing using DNA-templated palladium nanowires. In: IEEE Sensors. 2011, Limerick, Ireland: IEEE.
• Soare S, Bull SJ, Oila A, O'Neill AG, Wright N, Horsfall A, dos Santos J. Determination of mechanical parameters for rotating MEMS structures as a function of deposition method. In: Thin Films: Stresses and Mechanical Properties X. 2004, Boston, Massachusetts, USA: Materials Research Society.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC Schottky diodes with high on-off current ratio. In: International Conference on Silicon Carbide and Related Materials. 2001.
• Wright NG, Johnson CM, ONeill AG, Horsfall AB, Ortoll S, Adachi K, Knights AP, Coleman PG. Implanted bipolar technology in 4H-SiC. Materials Research Society Symposium Proceedings 2000, 622, T1.7.1-T1.7.6.
• Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Phelps GJ, Knights AP, Coleman PG, Burrows CP. Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology. In: Materials Research Society Symposium - Proceedings 2000. 2000, Boston USA: Cambridge University Press.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals. Physical Review B 2012, 86(15), 155301.
• Martin LC, Clark D, Ramsay EP, Murphy AE, Thompson RF, Smith DA, Young RAR, Cormack JD, Wright NG, Horsfall AB. Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Tiwari AK, Goss JP, Briddon P, Wright NG, Horsfall AB. Density functional simulations of transition metal terminated (001)-diamond surfaces. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Brennan D, Vasilevskiy K, Wright N, Horsfall A. Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Furnival BJD, Wright NG, Horsfall AB. High Temperature Reliability of High-kappa/SiC MIS Hydrogen Sensors. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Spargo CM, Furnival BJD, Mahapatra RM, Goss JP, Wright NG, Horsfall AB. Identification of Slow States at the SiO2/SiC Interface Through Sub-Bandgap Illumination. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Escobedo-Cousin E, Vassilevski K, Nikitina I, Wright N, O'Neill A, Horsfall A, Goss J. Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Chan HK, Stevens RC, Goss JP, Wright NG, Horsfall AB. Low Frequency Noise in 4H-SiC Lateral JFET Structures. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Nagareddy VK, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Horsfall AB. Temperature Dependent Chemical Sensitivity of Epitaxial Graphene. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Barker S, Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB. Thermal Stress Response of Silicon Carbide pin Diodes Used As Photovoltaic Devices. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Smith S, Brockie NL, Murray J, Schiavone G, Wilson CJ, Horsfall AB, Terry JG, Stevenson JTM, Mount AR, Walton AJ. Fabrication and Measurement of Test Structures to Monitor Stress in SU-8 Films. IEEE Transactions on Semiconductor Manufacturing 2012, 25(3), 346-354.
• Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson PJ. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon. Journal of Applied Physics 2013, 113(11), 114309.
• Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson P. Optimising the Growth of Few-Layer Graphene on Silicone Carbide by Nickel Silicidation. Materials Science Forum 2013, 740-742, 121-124.
• Furnival BJD, Roy SK, Vassilevski KV, Wright NG, Horsfall AB. CMOS compatible gas sensor arrays for hostile environments. In: Sensors. 2012, Taipei, Taiwan: IEEE.
• Brennan DR, Mostaghimi O, Vassilevski KV, Wright NG, Horsfall AB. Novel SiC self starting DC-DC converter for high temperature wireless sensor nodes. In: Sensors. 2012, Taipei, Taiwan: IEEE.