Dr Kelvin KwaResearch Associate
Mojarad SA, Kwa KSK, Goss JP, Zhou Z, Ponon NK, Appleby DJR, Al Hamadany RAS, O'Neill A. A comprehensive study on the leakage current mechanisms of Pt/SrTiO3 /Pt capacitor .
Journal of Applied Physics 2012, 111 (1), 014503.
Alatise O, Kwa K, Olsen S, O'Neill A. A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter .
In: International Semiconductor Device Research Symposium (ISDRS) . 2009, College Park, Maryland, USA.
Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Norris DJ, Cullis AG, Robbins DJ, Zhang J. Evaluation of strained Si/SiGe material for high performance CMOS .
Journal of Applied Physics 2004, 95 (10), 5931-5933.
Driscoll L, Olsen S, Chattopadhyay S, O'Neill A, Kwa K, Dobrosz P, Bull S. Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters .
In: High-Mobility Group IV Materials and Devices . 2004, San Francisco, California, USA: Materials Research Society.
Olsen S, Driscoll L, Kwa K, Chattopadhyay S, O'Neill A, Waite A, Tang Y, Evans A, Norris D, Cullis A, Paul D, Robbins D. High performance strained Si.SiGe NMOSFETs using a novel CMOS architecture .
In: Third International Conference on SiGe(C) Epitaxy and Heterostructures . 2003, Santa Fe, New Mexico, USA.
Olsen SH, Driscoll LS, Kwa KSK, Chattopadhyay S, O'Neill AG. High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture .
In: International Conference on Solid State Devices and Materials (SSDM) . 2003, Tokyo, Japan.
Olsen SH, Driscoll LS, Kwa KSK, Chattopadhyay S, O'Neill AG, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Paul DJ, Robbins DJ. High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture .
In: International Conference on Silicon Epitaxy and Heterostructures (ICSI3) . 2003, Santa Fe, New Mexico, USA.
Olsen SHJ, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Bull SJ, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Zhang J. Impact of Virtual Substrate Ge Composition on Strained Si MOSFET Performance .
In: Electronic Materials Conference . 2003, Salt Lake City, Utah, USA.
Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Bull SJ, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Zhang J. Impact of virtual substrate Ge composition on strained Si MOSFET performance .
In: Electronic Materials Conference (EMC) . 2003, Salt Lake City, Utah, USA.
Kwa KSK, Chattopadhyay S, Olsen SH, Driscoll LS, O'Neill AG. Optimisation of channel thickness in strained Si/SiGe MOSFETs .
In: 33rd European Solid-State Device Research . 2003, Estoril, Portugal: IEEE.
Kwa K, Chattopadhyay S, Olsen S, Driscoll L, O'Neill AG. Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs .
In: Proc ESSDERC . 2003, Lisbon, Portugal.
Kwa KSK, Chattopadhyay S, Olsen SH, Driscoll LS, O'Neill AG. Optimisation of channel thickness in strained Si/SiGe MOSFETs .
In: 33rd European Solid-State Device Research Conference (ESSDERC) . 2003, Estoril, Portugal: IEEE.
Kwa KS, ONeill AG. Diffusion of Boron in Stained Si-SiGe .
In: PREP Conference . 2001, Keele.
