Newcastle University

Projects

• Characterisation and Reliability of Thin Gate Dielectrics
  Project Leader(s): Prof. Anthony O'Neill
• Nanometre Strain Evaluation for Future and Emerging Technologies
  Project Leader(s): Dr Sarah Olsen
• Nanoscale strain measurements and modelling of short channel planar devices
• NANOSIL
  Project Leader(s): Dr Sarah Olsen
• Platform Grant: Strained Si/SiGe: Materials, Technology and Design
  Project Leader(s): Prof. Anthony O'Neill, Prof. Alex Yakovlev, Dr Sarah Olsen
• SiGe for MOS Technologies
  Project Leader(s): Prof. Anthony O'Neill, Dr Sarah Olsen
• SiNANO – Silicon-based Nanodevices European Union Network of Excellence
  Project Leader(s): Prof. Anthony O'Neill
• Strained Si TERS
  Project Leader(s): Dr Sarah Olsen
• Strained Si/SiGe Virtual Substrate Heterojunction Bipolar Transistor
  Project Leader(s): Prof. Anthony O'Neill, Dr Sarah Olsen
• TCAD Study of SiGe Virtual Substrate Heterojunction Bipolar Transistor
  Project Leader(s): Prof. Anthony O'Neill, Dr Sarah Olsen, Prof. S. Bull

• Olsen SH, O'Neill AG, Driscoll LS, Kwa KSK, Chattopadhyay S, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Paul DJ, Robbins DJ. High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture. IEEE Transactions on Electron Devices 2003, 50(9), 1961-1969.
• Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Zhang J, Robbins DJ, Higgs V. Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics 2003, 94(10), 6855-6863.
• Olsen SH, O'Neill AG, Driscoll LS, Chattopadhyay S, Kwa KSK, Waite AM, Tang YT, Evans AGR, Zhang J. Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs. IEEE Transactions on Electron Devices 2004, 51(7), 1156-1163.
• Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK. Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics 2005, 97(11), 1-9.
• Olsen SH, O'Neill AG, Chattopadhyay S, Driscoll LS, Kwa KSK, Norris DJ, Cullis AG, Paul DJ. Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs. IEEE Transactions on Electron Devices 2004, 51(8), 1245-1253.
• Olsen SH, O'Neill AG, Bull SJ, Woods NJ, Zhang J. Effect of metal-oxide-semiconductor processing on the surface rouhness of strained Si/SiGe material. Journal of Applied Physics 2002, 92(3), 1298-.
• Yan L, Olsen SH, Escobedo-Cousin E, O'Neill AG. Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates. Journal of Applied Physics 2008, 103(9), 094508.
• Fobelets K, Rumyantsev SL, Shur MS, Olsen SH. Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics 2008, 103(4), 044501.
• Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C. Insight into the aggravated lifetime reliability in advanced MOSFETs with strained-Si channels on SiGe strain-relaxed buffers due to self-heating. IEEE Transactions on Electron Devices 2008, 55(6), 1568-1573.
• Agaiby RMB, Olsen SH, Dobrosz P, Coulson H, Bull SJ, O'Neill AG. Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers. In: 50th Electronic Materials Conference (EMC 2008). 2008, Santa Barbara, USA: The Minerals, Metals & Materials Society (TMS).
• Agaiby RMB, Olsen SH, Dobrosz P, Coulson H, Bull SJ, O'Neill AG. Nanometer strain profiling through Si/SiGe quantum layers. Journal of Applied Physics 2008, 104(1), 013507.
• Olsen SH, Dobrosz P, Agaiby RMB, Tsang YL, Alatise O, Bull SJ, O'Neill AG, Moselund KE, Ionescu AM, Majhi P, Buca D, Mantl S, Coulson H. Nanoscale strain characterisation for ultimate CMOS and beyond. In: E-MRS 2008 Spring Meeting. 2008, Strasbourg: Materials Science in Semiconductor Processing: Pergamon.
• Dobrosz P, Olsen SH, Bull SJ, Tsang YL, Agaiby RMB, O'Neill AG, Buca D, Mantl S, Ghyselen B. Nanoscale strain characterisation in patterned SSOI structures. In: E-MRS 2008 Spring Conference. 2008, Strasbourg, France.
• O'Neill AG, Agaiby R, Olsen S, Yang Y, Hellstrom P-E, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. Reduced self-heating by strained silicon substrate engineering. Applied Surface Science 2008, 254(19), 6182-6185.
• Olsen SH, Tarawneh ZAl, Varzgar J, Escobedo-Cousin E, Agaiby RMB, Dobrosz P, O'Neill AG, Hellström P-E, Östling M, Parker E, Loo R, Claeys C. Strain engineering for high mobility channels. In: 7th International Semiconductor Technology Conference. 2008, Shanghai, China: The Electrochemical Society.
• Moselund KE, Dobrosz P, Olsen S, Pott V, De Michielis L, Tsamados D, Bouvet D, O'Neill A, Ionescu AM. Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress. In: International Electron Devices Meeting (IEDM). 2007, Washington, DC: IEEE.
• O'Neill AG, Olsen SH, Tsang YL, Dobrosz P. Evolution of strain engineering for Si technology. In: Insulating Films on Semiconductors (INFOS). 2006, Athens, Greece.
• Fobelets K, Rumyantsev SL, Olsen SH, Shur MS. Increased flicker noise with increasing Ge concentration in the virtual substrate of strained Si surface channel n-MOSFETs. In: Advanced workshop on Frontiers in Electronics (WOFE). 2007, Cozumel, Mexico.
• Tsang YL, Chattopadhyay S, Uppal S, Escobedo-Cousin E, Ramakrishnan HK, Olsen SH, O'Neill AG. Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures. IEEE Transactions on Electron Devices 2007, 54(11), 3040-3048.
• Olsen SH. Nanoscale characterisation and modelling. In: International Nanotechnology Conference (INC3). 2007, Brussels, Belgium.
• Agaiby R, Yang Y, Olsen SH, O'Neill AG, Eneman G, Verheyen P, Loo R, Claeys C. Quantifying self-heating effects in strained Si MOSFETs with scaling. Solid-State Electronics 2007, 51(11-12), 1473-1478.
• O'Neill AG, Olsen SH, Yang Y, Agaiby R, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. Reduced self-heating by strained Si substrate engineering. In: International Symposium on Control of Semiconductor Interfaces (ISCSI-V). 2007, Tokyo, Japan.
• O'Neill AG, Olsen SH, Yang Y, Agaiby R, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. Reduced self-heating by strained Si substrate engineering. In: 3rd International Workshop on New Group IV Semiconductor Nanoelectronics. 2007, Sendai, Japan.
• Olsen SH, Yan L, Agaiby R, Escobedo-Cousin E, O'Neill AG. Strained Si/SiGe MOS technology: improving gate dielectric integrity. In: International Symposium on Advanced Gate Stack Technology (ISAGST). 2007, Dallas, USA.
• Escobedo-Cousin E, Olsen SH, O'Neill AG, Alatise OM, Agaiby RMB, Dobrosz P, Braithwaite G, Cuthbertson A, Grasby T, Parker EHC. Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs. In: Materials REsearch Society Conference (MRS). 2007, San Francisco, USA.
• Escobedo-Cousin E, Olsen SH, Dobrosz P, Bull SJ, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers. Journal of Applied Physics 2007, 102(12), -.
• Yan L, Olsen SH, Kanoun M, Al-Araimi M, Agaiby R, Dalapati GK, O'Neill AG. Analysis of gate leakage in strained Si MOSFETs. In: 210th Electrochemical Society Meeting. 2006, Cancun, Mexico: ECS Transactions, Electrochemical Society, Inc.
• Tsang YL, Chattopadhyay S, Kwa KSK, Dalapati GK, Agaiby R, O'Neill AG, Olsen SH. Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture. In: International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS-2006). 2006, Calcutta, India.
• Chattopadhyay S, Varzgar JB, Seger J, Tsang YL, Kwa KSK, Olsen SH, O'Neill AG. Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices. In: International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS 2006). 2006, Calcutta, India.
• Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Seger J, Dobrosz P, Chattopadhyay S, Bull SJ, O'Neill AG, Hellstrom P-E, Edholm J, Ostling M, Lyutovich KL, Oehme M, Kasper E. Control of self-heating in thin virtual substrate strained Si MOSFETs. IEEE Transactions on Electron Devices 2006, 53(9), 2296-2305.
• O'Neill AG, Olsen SH, Escobedo-Cousin E, Agaiby R, Bull SJ, Coulson H, Claeys C, Loo R, Delougne R, Caymax M, Verheyen P, Eneman G. Device related characterisation techniques for Si/SiGe heterostructures. In: International Conference on NANO-Structures Self-Assembling (NANOSea). 2006, Aix-en-Provence, France.
• Olsen SH, Temple M, O'Neill AG, Paul DJ, Chattopadhyay S, Kwa KSK, Driscoll LS. Doubling speed using strained Si/SiGe CMOS technology. In: Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4). 2005, Awaji Island, Hyogo, Japan: Thin Solid Films: Elsevier.
• Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH. Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method. Journal of Applied Physics 2006, 99(3), 024501.
• Yan L, Olsen SH, Kanoun M, Agaiby R, O'Neill AG. Gate leakage mechanisms in strained Si devices. Journal of Applied Physics 2006, 100(10), 104507.
• Varzgar JB, Chattopadhyay S, Uppal S, Chandra P, Olsen SH, O'Neill AG. Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer. In: European Materials Research Society Conference (E-MRS). 2006, Nice, France.
• Uppal S, Varzgar J, Chattopadhyay S, Olsen SH, O'Neill AG. Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation. In: Proceedings of the European Materials Research Society Conference (E-MRS). 2006, Nice, France.
• Uppal S, Kanoun M, Chattopadhyay S, Agaiby R, Olsen SH, Bull SJ, O'Neill AG. Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices. In: Doping Engineering for Device Fabrication. 2006, San Francisco, USA: Materials Research Society.
• Uppal S, Kanoun M, Varzgar JB, Chattopadhyay S, Olsen SH, O'Neill AG. Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices. Material Science and Engineering B 2006, 135(3), 207-209.
• Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, Tsang YL, Agaiby R, O'Neill AG, Dobrosz P, Bull SJ. Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs. IEEE Transactions on Electron Devices 2006, 53(5), 1142-1152.
• Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C. Quantifying self-heating effects in strained Si MOSFETs with scaling. In: European Solid State Device Research Conference (ESSDERC). 2006, Montreux, Switzerland.
• Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Tsang YL, Escobedo-Cousin E, Olsen SH, O'Neill AG, Hellstrom PE, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures. Material Science and Engineering B 2006, 135(3), 203-206.
• Olsen SH, Dobrosz P, Escobedo-Cousin E, Agaiby RMB, Agaiby R, Bull SJ, O'Neill AG. Strain characterisation in advanced Si devices. In: European Solid State Device Research Conference (ESSDERC) Workshop. 2006, Montreux, Switzerland.
• O'Neill AG, Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Seger J, Dobrosz P, Chattopadhyay S, Bull SJ, Hellstrom P-E, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. Strained Si MOSFETs using thin virtual substrates. In: Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for the ULSI Era. 2006, Warsaw, Poland.
• O'Neill AG, Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Chattopadhyay S, Dobrosz P, Bull SJ, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E. Strained Si technology. In: Solid-State and Integrated Circuit Technology Conference (ICSICT). 2006, Shanghai, China.
• O'Neill AG, Olsen SH, Chattopadhyay S. Strained Si/SiGe MOS technology. In: Proceedings of the International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS). 2006, Calcutta, India.
• O'Neill AG, Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Chattopadhyay S, Dobrosz P, Bull S, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E. Strained silicon technology. In: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2006, Shanghai, China: IEEE Press.
• Escobedo-Cousin E, Olsen SH, Bull SJ, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. Study of surface roughness and dislocation generation in strained Si layers grown on thin strain-relaxed buffers for high performance MOSFETs. In: Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006, Princeton, USA: IEEE Press.
• Olsen SH, Dobrosz P, Bull S, O'Neill A. The relationship between strain generation and relaxation, composition and electrical performance in strained Si/SiGe MOS technology. In: 33rd International Conference on Metallurgical Coatings and Thin Films (ICMCTF 2006). 2006, San Diego, USA.
• Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Driscoll LS, Tsang YL, Agaiby R, Escobedo-Cousin E. Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface. In: International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS). 2006, Calcutta, India.
• Reimer PM, Escobedo-Cousin E, Olsen SH, Evans SE, Tanner BK. X-ray studies of strained-Si heterostructures. In: Physics in Low Dimensions: Structure Meets Magnetism. 2006, Bochum, Germany.
• Chang ACK, Norris DJ, Ross IM, Cullis AG, Olsen SH, O'Neill AG. A study of SiGe/Si n-MOSFET processed and unprocessed channel layers using FIB and TEM methods. In: Proceedings of the 14th Conference on Microscopy of Semiconducting Materials (MSM). 2005, Oxford, UK: Springer.
• O'Neill AG, Olsen SH, Hellstroem P-E, Ostling M, Lyutovich K, Kasper E. Advancing strained silicon. In: European Solid State Device Research Conference (ESSDERC) Workshop. 2005, Grenoble, France.
• Bull SJ, Dobrosz P, Olsen SH, O'Neill AG. Assessment of strained silicon/SiGe with different architectures by Raman spectroscopy. In: Proceedings of Electronic Materials Conference. 2005, Santa Barbara, USA.
• Agaiby R, O'Neill AG, Olsen SH. Design considerations for strained Si/SiGe deep submicron dual-channel CMOS using high thermal budgets. In: Engineering and Physical Sciences Research Council Annual Conference. 2005, Lancaster, UK.
• Kwa KSK, Olsen SH, O'Neill AG, Chattopadhyay S, Dalapati G, Driscoll LS. Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness. In: Proceedings of the Electronic Materials Conference. 2005, Santa Barbara, USA.
• Olsen SH, Driscoll L, Kwa K, Chattopadhyay S, O'Neill AG. High performance strained Si.SiGe n-channel MOSFETs: impact of alloy composition and layer architecture. In: International Conference on Solid State Devices and Materials (SSDM). 2005, Tokyo, Japan.
• Dhar RS, Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, O'Neill AG. Modelling of self-heating in strained Si n-channel MOSFETs on SiGe virtual substrates. In: Proceedings of the Materials Research Society Conference (MRS). 2005, Boston, Massachusetts, USA.
• Bull SJ, Dobrosz P, Olsen SH, O'Neill AG. On the relationship between electrical performance and Raman spectroscopic results for strained Si/SiGe devices. In: International Conference on Silicon Epitaxy and Heterostructures (ICSI4). 2005, Awaji Island, Japan.
• Norris DJ, Cullis AG, Olsen SH, O'Neill AG. Quantitative analysis of gate-oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures. Thin Solid Films 2005, 474(1-2), 154-158.
• Paul DJ, Temple M, Olsen SH, O'Neill AG, Tang YT, Waite AM, Cerrina C, Evans AGR, Li X, Zhang J, Norris DJ, Cullis AG. Strained-Si n-MOS surface-channel and buried Si0.7Ge 0.3 compressively-strained p-MOS fabricated in a 0.25 μm heterostructure CMOS process. In: Materials Science in Semiconductor Processing: 2nd International SiGe Technology and Device Meeting (ISTDM 2004). 2004, Frankfurt (Oder), Germany: Pergamon.
• Hellstrom P-E, Edholm J, Ostling M, Olsen S, O'Neill A, Lyutovich K, Oehme M, Kasper E. Strained-Si NMOSFETs on thin 200 nm virtual substrates. In: International Semiconductor Device Research Symposium. 2005, Washinton DC, USA: IEEE.
• Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures. Surface and Coatings Technology 2005, 200(5-6), 1755-1760.
• Olsen SH, Kwa KSK, Driscoll LS, Chattopadhyay S, O'Neill AG. Design, fabrication and characterisation of strained Si/SiGe MOS transistors. IEE Proceedings: Circuits, Devices and Systems 2004, 151(5), 431-437.
• Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Norris DJ, Cullis AG, Robbins DJ, Zhang J. Evaluation of strained Si/SiGe material for high performance CMOS. Semiconductor Science and Technology 2004, 19(6), 707-714.
• Driscoll L, Olsen S, Chattopadhyay S, O'Neill A, Kwa K, Dobrosz P, Bull SJ. Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters. In: Materials Research Society Symposium Proceedings. 2004, San Francisco, CA: Symposium on High-Mobility Group-IV Materials and Devices.
• Lafford TA, Olsen SH, O'Neill AG, Tanner BK. Measurement of relaxation in strained silicon by grazing incidence in-plane x-ray diffraction. In: High Resolution X-Ray Diffraction and Imaging (XTOP). 2004, Prague, Czechoslovakia.
• Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy. In: Symposium on High Mobility Group IV Materials and Devices held at the 2004 MRS Spring Meeting. 2004, San Francisco, CA: Materials Research Society.
• Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. Measurement of the residual strain in strained Si/SiGe using Raman spectroscopy. Zeitschrift fuer Metallkunde 2004, 95(5), 340-344.
• Norris DJ, Cullis AG, Olsen SH, O'Neill AG, Zhang J. Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures. In: Microscopy of Semiconducting Materials Conference. 2004, University of Cambridge, UK: Institute of Physics Publishing.
• Chattopadhyay S, Driscoll LD, Kwa KSK, Olsen SH, O'Neill AG. Strained Si MOSFETs on relaxed SiGe platforms: Performance and challenges. Solid-State Electronics 2004, 48(8), 1407-1416.
• Olsen SH, Kwa KSK, Chattopadhyay S, Driscoll LS, O'Neill AG. Strained Si/SiGe n-channel MISFETs. IEE Proceedings: Circuits, Devices and Systems 2004, 151(5), 431-437.
• Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy. In: 4th European Symposium on NanoMechanical Testing. 2004, Huckelhoven, Germany: Zeitschrift fuer Metallkunde.
• Gaspari V, Fobelets K, Ding PW, Velazquez-Perez JW, Olsen SH, O'Neill AG, Zhang J. Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode. IEEE Electron Device Letters 2004, 25(5), 334-336.
• Gaspari V, Fobelets K, Olsen SH, Velazquez-Perez JE, O'Neill AG, Zhang J. Temperature sensitivity of DC operation of sub-micron strained-Si MOSFETs. In: Proceedings of the Electronics Materials Conference. 2004, Notre Dame, Maryland, USA.
• Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Bull SJ, Chattopadhyay S, Kwa KSK, Driscoll LS, Waite AM, Tang YT, Evans AGR. Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices. Materials Science and Engineering B 2004, 109(1-3), 78-84.
• Inkson BJ, Olsen S, Norris DJ, O'Neill AG, Mobus G. 3D determination of a MOSFET gate morphology by FIB tomography. In: Conference on Microscopy of Semiconducting Materials. 2003, Cambridge: IOP Publishing.
• Kwa KSK, Chattopadhyay S, Jankovic ND, Olsen SH, Driscoll LS, O'Neill AG. A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics. Semiconductor Science and Technology 2003, 18(2), 82-87.
• Chattopadhyay S, Kwa KSK, Olsen SH, Driscoll LS, O'Neill AG. C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design. Semiconductor Science and Technology 2003, 18(8), 738-744.
• O'Neill AG, Olsen SH. Design, Fabrication and Characterisation of Strained Si/SiGe MOSFETs. In: Workshop on Si/SiGe FET Technology. 2003, Ulm, Germany.
• Driscoll LS, O'Neill AG, Olsen SH, Chattopadhyay S, Kwa KSK. Dual quantum well strained silicon/silicon-germanium n-channel heterojunction metal oxide semiconductor field effect transistors for CMOS logic. In: Proc. PREP. 2003, Exeter, UK.
• Olsen SH, Driscoll LS, Kwa KSK, Chattopadhyay S, O'Neill AG. High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture. In: International Conference on Solid State Devices and Materials (SSDM). 2003, Tokyo, Japan.
• Olsen SH, Driscoll LS, Kwa KSK, Chattopadhyay S, O'Neill AG, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Paul DJ, Robbins DJ. High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture. In: International Conference on Silicon Epitaxy and Heterostructures (ICSI3). 2003, Santa Fe, New Mexico, USA.
• Olsen S, Chattopadhyay S, Kwa K, Driscol L, O'Neill A. Impact of Material Quality onHigh Performace Strained Si/SiGe heterostructure MOSFETs. In: Si Manoelectronics Workshop. 2003, Kyoto Japan.
• Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Bull SJ, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Zhang J. Impact of virtual substrate Ge composition on strained Si MOSFET performance. In: Electronic Materials Conference (EMC). 2003, Salt Lake City, Utah, USA.
• Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Fobelets K, Kemhadjian HA. Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs. Solid-State Electronics 2003, 47(8), 1289-1295.
• Olsen SH, O'Neill AG, Chattopadhay S, Driscoll LS, Kwa KSK, Paul DJ, Zhang J. N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures. In: 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741). IEEE. 2003. 2003, Washington, DC: IEEE.
• Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Fobelets K, Kemhadjian HA. Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs. Solid State Electronics 2003, 47(8), 1289-1295.
• Norris DJ, Cullis AG, Olsen SH, O'Neill AG. Measurement of the nanoscale roughness of advanced MOSFET layer structures. In: Materials Research Society Conference (MRS). 2002, Boston, Massachusetts, USA.
• Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Woods NJ, Zhang J, Fobelets K, Kemhadjian HA. Strained Si/SiGe n-channel MOSFETs: Impact of cross-hatching on device performance. Semiconductor Science and Technology 2002, 17(7), 655-661.
• Olsen SH, O'Neill AG. Analysis of strained Si/SiGe MOSFETs. In: Proc. PREP. 2000, Nottingham, UK.
• Makovejev S, Olsen SH, Arshad MKM, Flandre D, Raskin JP, Kilchytska V. Improvement of High-Frequency FinFET Performance by Fin Width Engineering. In: IEEE International SOI Conference. 2012, Napa, California, USA: IEEE.
• Bhaskar U, Passi V, Houri S, Escobedo-Cousin E, Olsen SH, Pardoen T, Raskin JP. On-chip tensile testing of nanoscale silicon free-standing beams. Journal of Materials Research 2012, 27(3), 571-579.
• Urena F, Olsen SH, Siller L, Bhaskar U, Pardoen T, Raskin JP. Strain in silicon nanowire beams. Journal of Applied Physics 2012, 112(11), 114506.
• Escobedo-Cousin E, Olsen SH, Pardoen T, Bhaskar U, Raskin JP. Experimental observations of surface roughness in uniaxially loaded strained Si microelectromechanical systems-based structures. Applied Physics Letters 2011, 99(24), 241906.
• Kapoor R, Escobedo-Cousin E, Olsen S, Bull S. Characterising gate dielectrics in high mobility devices using novel nanoscale techniques. In: Microelectronics Reliability: 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis. 2010, Gaeta, Italy: Pergamon.
• Alatise O, Kwa K, Olsen S, O'Neill A. A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter. In: International Semiconductor Device Research Symposium (ISDRS). 2009, College Park, Maryland, USA.
• De Michielis L, Moselund K, Bouvet D, Dobrosz P, Olsen S, O'Neill A, Lattanzio L, Najmzadeh M, Selmi L, Ionescu A. Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs. In: International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2009, Hsinchu, Taiwan: IEEE.
• Olsen SH, Dobrosz P, Escobedo-Cousin E, Bull SJ, O'Neill AG. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs. In: EMRS 2005, Symposium D: Materials Science and Device Issues for Future Technologies. 2005, Strasbourg, France: Materials Science and Engineering B: Solid-State Materials for Advanced Technology: Elsevier.
• Olsen S, Temple M, Chattopadhyay S, O'Neill A, Paul DJ, Kwa K, Drsicoll AWL, Tang AEY, Zhang J. Strained Si/SiGe CMOS: high performance without re-tooling. In: Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSi4). 2005, Awaji Island, Japan.
• Inkson BJ, Olsen S, Norris DJ, O'Neill AG, Mobus G. 3D determination of a MOSFET gate morphology by FIB tomography. In: Microscopy of Semiconducting Materials Conference. 2004, Cambridge University, UK: Institute of Physics.
• Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Norris DJ, Cullis AG, Robbins DJ, Zhang J. Evaluation of strained Si/SiGe material for high performance CMOS. Journal of Applied Physics 2004, 95(10), 5931-5933.
• Driscoll L, Olsen S, Chattopadhyay S, O'Neill A, Kwa K, Dobrosz P, Bull S. Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters. In: High-Mobility Group IV Materials and Devices. 2004, San Francisco, California, USA: Materials Research Society.
• Lafford TA, Olsen SH, Tanner BK, O'Neill AG. Measurement of Relaxation in Strained Silicon by Grazing Incidence In-plane X-ray Diffraction. 2004, Prague, Czech.
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