Newcastle University

Introduction

I am a physicist with interests in understanding, modeling and developing advanced materials, processes and device concepts for nanoelectronics and photovoltaic technology.

Together with my research team I have developed some of the leading process simulation models for Technology Computer Aided Design (TCAD) of Si and SiGe based devices.  Our models, which are routinely implemented in industry-standard TCAD tools, have been shown to predict down to 32 nm CMOS device parameters with minimal calibration.  They are now being used by industry worldwide to explore and develop 22 nm technology and beyond.  Further model development includes a new continuum theory of charged species diffusion in solids, which will allow increased simulation accuracy. 

We are currently applying these models to full (process and device TCAD) evaluations of commercial c-Si photovoltaic technology aiming at cost neutral enhancements of conversion efficiency.  This work is complemented by experimental and modelling studies of future generation PV, in particular new nanostructured material combinations to enhance efficiency and support cost reductions for thin film solar cells.

Physical models for electrically active defects in Si and Ge based materials and devices are being developed in the EU FP7 ATEMOX project.  Multi-scale (first-principles and continuum) models for gettering processes in advanced solar cells are being developed in collaboration with Newcastle colleagues and an international technology partner.

Roles and Responsibilities

Lead Emerging Technology and Materials Research Group

Qualifications

MA (Oxford University), DPhil (Oxford University)

Previous Positions

• Royal Academy of Engineering Research Chair, Surrey University, UK, 2001-2007
• Visiting professor, Southampton University, UK, 1998-2001
• Adjunct professor, Aarhus University, Denmark, 1996-1998
• Principal Scientist, Philips Research, Netherlands, 1987-2001
• MTS, GEC Research, Wembley, UK, 1985-1987
• Senior scientific officer, Joint European Torus, Culham, UK, 1985
• Senior scientific officer, AEA Technology, Harwell, UK, 1976-1985

Memberships

Materials Research Society, UK Institute of Phyics

Honours and Awards

Materials Research Society Meeting Chair 2001

Royal Academy of Engineering Research Chair

International committee-elected professorship at Aarhus University

Languages

English, Dutch

Research Interests

My principal research interests are in the structural and thermodynamic properties of condensed matter: diffusion, defects, nucleation, nonequilibrium phase transformations and self organisation in electronic and opto-electronic materials. Active research outputs include enhancements to fundamental scientific understanding through theory and experiment, and advances in technology simulation models used in state-of-the-art commercial TCAD tools. A key application is silicon-based materials and processes for low cost, high efficiency photovoltaics.

Other Expertise

Modelling that captures key elements and interactions within complex systems.

Current Work

Materials research:

• Experimental and theoretical analysis of composition and stress effects on impurity doping in advanced semiconductor materials
• Multiscale modelling of charged defect transport in solids
• Thermal evolution of electrically active defects in silicon (and their effects in nanoelectronics and PV)
• Modelling of gettering processes in thin film c-Si photovotaics
• Integrated process and device modelling for Si PV efficiency enhancement
• Research on fabrication of multicrystalline silicon thin films 

Future Research

• Research towards ultra low cost silicon based photovoltaic
• Research on novel quantum structures for high efficiency photovoltaics

Research Roles

Research management and active research in a wide network of international and UK collaborations

Industrial Relevance

Recognized world leading expertise in integrated TCAD (predictive process and device simulation) with a recently developed focus on PV technology. This provides the PV industry with a vitally important fast track to efficiency enhancement (see for example a recent review article from Newcastle in Photovoltaics International, Edition 12)

• Cowern NEB, Ahn C. TCAD in the semiconductor industry and its advantages for solar cell manufacturing. Photovoltaics International 2011, 12, 56-64.
• Uppal S, Willoughby AFW, Bonar JM, Cowern NEB, Morris RJH, Dowsett MG. Diffusion of ion-implanted boron and silicon in germanium. In: Materials Science Forum: Materials Research Society Spring Meeting. 2004, San Francisco, California, USA: Trans Tech Publications Ltd..
• Ahn C, Bennett N, Dunham ST, Cowern NEB. Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon. Physical Review B 2009, 79(7), 073201.
• Cowern NEB, Ahn C. Thermal emissions and climate change: Cooler options for future energy technology. 2009. Available at :http://arxiv.org/ftp/arxiv/papers/0811/0811.0476.pdf.
• Pawlak BJ, Cowern NEB, Vandervorst W. B profile alteration by annealing in reactive ambients. Applied Physics Letters 2009, 94(2), 022104.
• O'Reilly L, Horan K, McNally PJ, Bennett NS, Cowern NEB, Lankinen A, Sealy BJ, Gwilliam RM, Noakes TCQ, Bailey P. Constraints on micro-Raman strain metrology for highly doped strained Si materials. Applied Physics Letters 2008, 92(23), -.
• Bennett NS, Cowern NEB, Smith AJ, Kah M, Gwilliam RM, Sealy BJ, Noakes TCQ, Bailey P, Giubertoni D, Bersani M. Differential Hall characterisation of ultrashallow doping in advanced Si-based materials. Materials Science and Engineering B: Advanced Functional Solid-state Materials 2008,154-155 1-3 229-233.
• Clarysse T, Bogdanowicz J, Goossens J, Moussa A, Rosseel E, Vandervorst W, Petersen D, Lin R, Nielsen PF, Hansen O, Merklin G, Bennett NS, Cowern NEB. On the analysis of the activation mechanisms of sub-melt laser anneals. Materials Science and Engineering B: Advanced Functional Solid-state Materials 2008,154-155 1-3 24-30.
• Bennett NS, Radamson HH, Beer CS, Smith AJ, Gwilliam RM, Cowern NEB, Sealy BJ. Enhanced n-type dopant solubility in tensile-strained Si. Thin Solid Films 2008, 517(1), 331.
• O'Reilly L, Bennett NS, McNally PJ, Sealy BJ, Cowern NEB, Lankinen A, Tuomi TO. Raman scattering studies of ultrashallow Sb implants in strained Si. Journal of Materials Science: Materials in Electronics 2008, 19(4), 305-309.
• Horan K, Lankinen A, O'Reilly L, Bennett NS, McNally PJ, Sealy BJ, Cowern NEB, Tuomi TO. Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering B: Advanced Functional Solid-state Materials 2008,154-155 1-3 118-121.
• Cowern NEB, Smith AJ, Bennett N, Sealy BJ, Gwilliam R, Webb RP, Colombeau B, Paul S, Lerch W, Pakfar A. Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping. In: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing. 2008, Dornstadt, Germany: Trans Tech Publications Ltd..
• Sharp JA, Smith AJ, Webb RP, Kirkby KJ, Cowern NEB, Giubertoni D, Gennaro S, Bersani M, Foad MA, Fazzini PF, Cristiano F. Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing. Applied Physics Letters 2008, 92(8), -.
• Cowern NEB. Diffusion in a single crystal within a stressed environment. Physical Review Letters 2007, 99(15), -.
• Christmas UME, Faux DA, Cowern NEB. Elastic interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal. Physical Review B: Condensed Matter and Materials Physics 2007, 76(20), 205205.
• Hamilton JJ, Kirkby KJ, Cowern NEB, Collart EJH, Bersani M, Giubertoni D, Gennaro S, Parisini A. Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink. Applied Physics Letters 2007, 91(9), -.
• Ferri M, Solmi S, Giubertoni D, Bersani M, Hamilton JJ, Kah M, Kirkby K, Collart EJH, Cowern NEB. Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator. Journal of Applied Physics 2007, 102(10), -.
• Boninelli S, Cristiano F, Lerch W, Paul S, Cowern NEB. Influence of F co-implantation on end-of-range defect formation in B+ implanted, ultrashallow junctions. Electrochemical and Solid State Letters 2007, 10(9), H264-H266.
• Bennett NS, Smith AJ, Gwilliam RM, Webb RP, Sealy BJ, Cowern NEB, O'Reilly L, McNally PJ. Antimony for NMOS ultrashallow junctions in strained Si: a superior dopant to arsenic. In: INSIGHT. 2007, Napa, California.
• Bennett NS, Radamson HH, Beer CS, Smith AJ, Gwilliam RM, Cowern NEB, Sealy BJ. Enhanced n-type dopant solubility in tensile strained Si. In: 5th International Conference on Silicon Epitaxy and Heterostructures. 2007, Marseilles, France.
• O'Reilly L, McNally PJ, Bennett NS, Sealy BJ, Cowern NEB, Lankinen A. Micro-Raman Study of Anomalous Dopant-Induced Behaviour in Ultra-Shallow As and Sb Doped Strained Si. In: INSIGHT. 2007, Napa, California.
• Sharp J, Cowern NEB, Webb RP, Kirkby KJ, Giubertoni D, Gennaro S, Bersani M, Foad MA, Cristiano F, Fazzini PF. Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans. Applied Physics Letters 2006,89 19 192105.
• Cristiano F, Lamrani Y, Severac F, Gavelle M, Boninelli S, Cherkashin N, Marcelet O, Claverie A, Lerch W, Paul S, Cowern NEB, Duffy R. Defect evolution and dopant activation anomalies in ion implanted silicon. Nuclear Instruments and Methods in Physics Research B 2006,253 1-2 68-79.
• Colombeau B, Mok KRC, Yeong SH, Indajang B, Tan O, Yang B, Li Y, Bénistant F, Jaraiz M, Cowern NEB, Chu S. Design and optimization of nanoCMOS devices using predictive atomistic physics-based process modeling. In: International Electron Devices Meeting.2006,San Francisco, California, USA:IEEE
• Pichler P, Ortiz CJ, Colombeau B, Cowern NEB, Lampin E, Uppal S, Karunaratne MSA, Bonar JM, Willoughby AFW, Claverie A, Cristiano F, Lerch W, Paul S. Diffusion and activation of dopants in silicon and advanced silicon-based materials. In: 21sth Nordic Semiconductor Meeting. 2006, Sundvolden, Norway: Physica Scripta T, Kungliga Vetenskapsakademien.
• Hamilton JJ, Cowern NEB, Sharp JA, Kirkby KJ, Collart EJH, Colombeau B, Bersani M, Giubertoni D, Parisini A. Diffusion and activation of ultrashallow B implants in silicon-on-insulator: end-of-range defect dissolution and the buried Si/SiO2 interface. Applied Physics Letters 2006,89 4 042111.
• Pawlak BJ, Janssens T, Brijs B, Vandervorst W, Collart EJH, Felch S, Cowern NEB. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon. Applied Physics Letters 2006,89 6 62110.
• Hamilton JJ, Collart EJH, Colombeau B, Bersani M, Giubertoni D, Kah M, Cowern NEB, Kirkby KJ. Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator. In: Symposium C, Materials Research Society Spring Meeting.2006,San Francisco, California, USA
• Hamilton JJ, Colombeau B, Sharp JA, Cowern NEB, Kirkby KJ, Collart EJH, Bersani M, Giubertoni D. Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctions. Journal of Vacuum Science and Technology B 2006,24 442-445.
• Paul S, Lerch W, Colombeau B, Cowern NEB, Cristiano F, Boninelli S, Bolze D. Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon. Journal of Vacuum Science and Technology B 2006,24 1 437-441.
• Bennett NS, Smith AJ, Beer CS, O'Reilly L, Colombeau B, Dilliway GD, Harper R, McNally PJ, Gwilliam R, Cowern NEB, Sealy BJ. Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon. In: Symposium C, Materials Research Society Spring Meeting.2006,San Francisco, California, USA
• Abdulmalik DA, Coleman PG, Cowern NEB, Smith AJ, Sealy BJ, Lerch W, Paul S, Cristiano F. Fluorine-vacancy complexes in ultrashallow B-implanted silicon. Applied Physics Letters 2006,89 5 052114.
• Bennett NS, Smith AJ, Gwilliam RM, Cowern NEB, Sealy BJ. Highly conductive Sb-doped layers in strained silicon. Applied Physics Letters 2006,89 18 182122.
• Smith AJ, Cowern NEB, Colombeau B, Gwilliam R, Sealy BJ, Collart EJH, Gennaro S, Giubertoni D, Bersani M, Barozzi M. Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants. In: Ion Implantation Technology Conference.2006,Marseilles, France
• Hamilton JJ, Collart EJH, Bersani M, Giubertoni D, Gennaro S, Bennett NS, Cowern NEB, Kirkby KJ. Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator. In: Ion Implantation Technology Conference.2006,Marseilles, France
• Bennett NS, O'Reilly L, Smith AJ, Gwilliam RM, McNally PJ, Cowern NEB, Sealy BJ. Strain-Enhanced Activation of Sb Ultrashallow Junctions. In: Ion Implantation Technology Conference.2006,Marseilles, France
• Pawlak BJ, Duffy R, Janssens T, Vandervorst W, Collart EJH, Felch S, Cowern NEB. Suppression of phosphorus diffusion by carbon co-doping. Applied Physics Letters 2006,89 6 062102.
• Sealy BJ, Smith AJ, Alzanki T, Bennett N, Li L, Jeynes C, Colombeau B, Collart EJH, Emerson NG, Gwilliam RM, Cowern NEB. Ultra-shallow junctions in silicon via low thermal budget processing. In: International Workshop on Junction Technology.2006,Shanghai, China:IEEE
• Gwilliam R, Cowern NEB, Colombeau B, Sealy B, Smith AJ. Vacancy engineering for ultra-shallow junction formation. In: 19th International Conference on Application of Accelerators in Research and Industry.2006,Fort Worth, Texas, USA
• Smith AJ, Cowern NEB, Gwilliam R, Sealy BJ, Colombeau B, Collart EJH, Gennaro S, Giubertoni D, Bersani M, Barozzi M. Vacancy-engineering implants for high boron activation in silicon-on-insulator material. Applied Physics Letters 2006, 88(8), 082112.
• Ortiz CJ, Pichler P, Fuhner T, Cristiano F, Colombeau B, Cowern NEB, Claverie A. A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon. Journal of Applied Physics 2005, 96(9), 4866-4877.
• Wang CC, Sheu YM, Liu S, Duffy R, Heringa A, Cowern NEB, Griffin PB. Boron diffusion in strained and strain-relaxed SiGe. Materials Science and Engineering B 2005,124-125 39-44.
• Lampin E, Ortiz CJ, Cowern NEB, Colombeau B, Cristiano F. Combined master and Fokker-Planck equations for the modeling of the kinetics of extended defects in Si. Solid-State Electronics 2005,49 7 1168-1171.
• Bennett N, Smith AJ, Colombeau B, Gwilliam R, Cowern NEB, Sealy BJ. Differential Hall profiling of ultra-shallow junctions in Si and SOI. Materials Science and Engineering B 2005,124-125 305-309.
• Hamilton JJ, Collart EJH, Colombeau B, Jeynes C, Bersani M, Giubertoni D, Sharp JA, Cowern NEB, Kirkb KJ. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI. Nuclear Instruments and Methods in Physics Research B 2005,237 1-2 107-112.
• Pawlak BJ, Vandervorst W, Smith AJ, Cowern NEB, Colombeau B, Pages X. Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth. Applied Physics Letters 2005,86 10 101913.
• Pawlak BJ, Duffy R, Janssens T, Vandervorst W, Maex K, Smith AJ, Cowern NEB, Dao T, Tamminga Y. Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth. Applied Physics Letters 2005,87 3 031915.
• Smith AJ, Colombeau B, Bennett N, Gwilliam R, Cowern NEB, Sealy BJ. Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants. Materials Research Society Symposium Proceedings 2005,864 E7.1 1-5.
• Cowern NEB, Colombeau B, Benson J, Smith AJ, Lerch W, Paul S, Graf T, Cristiano F, Hebras X, Bolze D. Mechanisms of B deactivation control by F co-implantation. Applied Physics Letters 2005,86 10 101905.
• Lu X, McNally PJ, Dilliway GDM, Cowern NEB, Jeynes C, Mendoza E, Ashburn P, Bagnall DM. Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001). Journal of Materials Science: Materials in Electronics 2005,16 7 469-474.
• Smith AJ, Colombeau B, Gwilliam R, Cowern NEB, Sealy BJ, Milosavljevic M, Collart E, Gennaro S, Bersani M, Barozzi M. Suppression of boron interstitial clusters in SOI using vacancy engineering. Materials Science and Engineering B 2005,124-125 210-214.
• Dilliway GDM, Smith AJ, Hamilton JJ, Benson J, Colombeau B, Jones R, Lu Xu, McNally PJ, Cooke G, Kheyrandish H, Cowern NEB. Transient enhanced diffusion and deactivation of ion-implanted As in strained Si. Nuclear Instruments and Methods in Physics Research B 2005,237 1-2 131-135.
• Giles LF, Colombeau B, Cowern NEB, Molzer W, Schaefer H, Bach KH, Haibach P, Roozeboom F. Transient enhanced diffusion of B at low temperatures under extrinsic conditions. Solid State Electronics 2005,49 4 618-627.
• Hamilton JJ, Collart EJH, Colombeau B, Bersani M, Giubertoni D, Sharp JA, Cowern NEB, Kirkby KJ. Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ. Materials Science and Engineering B 2005,124-125 215-219.
• Cowern NEB, Smith AJ, Colombeau B, Gwilliam R, Sealy BJ, Collart EJH. Understanding, Modeling and Optimizing Vacancy Engineering for Stable Highly Boron-Doped Ultrashallow Junctions. In: IEEE International Electron Devices Meeting IEDM Technical Digest.2005,Washington, DC, USA:IEEE
• Collart EJH, Felch SB, Graoui H, Kirkwood D, Tallavarjula S, van den Berg JA, Hamilton JJ, Cowern NEB, Kirkby KJ. Advanced front-end processes for the 45 nm CMOS technology node. Materials Science & Engineering B 2004,114-115 118-29.
• Wang CC, Huang TY, Sheu YM, Duffy R, Heringa A, Cowern NEB, Griffin PB, Diaz CH. Boron diffusion in strained and strain-relaxed SiGe. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).2004,Munich, Germany:IEEE
• Colombeau B, Smith AJ, Cowern NEB, Pawlak BJ, Cristiano F, Duffy R, Claverie A, Ortiz CJ, Pichler P, Lampin E, Zechner C. Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions. In: Silicon Front-End Junction Formation-Physics and Technology. 2004, San Francisco, California, USA: Materials Research Society.
• Colombeau B, Cowern NEB, Cristiano F, Calvo P, Lamrani Y, Cherkashin N, Lampin E, Claverie A. Depth dependence of defect evolution and TED during annealing. Nuclear Instruments and Methods in Physics Research B 2004, 216, 90-94.
• Uppal S, Willoughby AFW, Bonar JM, Cowern NEB, Grasby T, Morris RJH, Dowsett MG. Diffusion of boron in germanium at 800–900°C. Journal of Applied Physics 2004, 96(3), 1376-1380.
• Uppal S, Willoughby AFW, Bonar JM, Cowern NEB, Morris RJH, Dowsett MG. Diffusion of ion-implanted Boron and Silicon in Germanium. Materials Research Society Symposium Proceedings: High-Mobility Group-IV Materials and Devices 2004,809 237-242.
• Smith AJ, Colombeau B, Gwilliam R, Collart EJH, Cowern NEB, Sealy BJ. Doping and mobility profiles in defect-engineered ultra-shallow junctions: Bulk and SOI. In: Silicon Front-End Junction Formation-Physics and Technology. 2004, San Francisco, California, USA: Materials Research Society.
• Mannino G, Privitera V, Scalese S, Libertino S, Napolitani E, Pichler P, Cowern NEB. Effect of oxygen on the diffusion of nitrogen implanted in silicon. Electrochemical and Solid-State Letters 2004,7 8 G161-G163.
• Colombeau B, Smith AJ, Cowern NEB, Lerch W, Paul S, Pawlak BJ, Cristiano F, Hebras X, Bolze D, Ortiz C, Pichler P. Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control. In: International Electron Device Meeting - IEDM technical digest.2004,San Francisco, California, USA:IEEE
• Pawlak BJ, Surdeanu R, Colombeau B, Smith AJ, Cowern NEB, Lindsay R, Vandervorst W, Brijs B, Richard O, Cristiano F. Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions. Applied Physics Letters 2004,84 12 2055-2057.
• Dilliway GDM, Cowern NEB, Lu X, McNally PJ, Jeynes C, Mendoza E, Ashburn P, Bagnall DM. Influence of H2 preconditioning on the nucleation and growth of self-assembled germanium islands on silicon (001). In: Nanoengineered Assemblies and Advanced Micro-Nanosystems. 2004, San Francisco, California, USA: Materials Research Society.
• Ortiz CJ, Cristiano F, Colombeau B, Claverie A, Cowern NEB. Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing. Materials Science and Engineering B: Advanced Functional Solid-state Materials 2004, 114-115, 184-192.
• Colombeau B, Cowern NEB. Modelling of the chemical-pump effect and C clustering. Semiconductor Science and Technology 2004, 19(12), 1339-1342.
• Pichler P, Ortiz CJ, Colombeau B, Cowern NEB, Lampin E, Claverie A, Cristiano F, Lerch W, Paul S. On the modeling of transient diffusion and activation of boron during post-implantation annealing. In: International Electron Device Meeting (invited paper).2004,San Francisco, California, USA:IEEE
• Graoui H, Hilkene M, McComb B, Castle M, Felch S, Cowern NEB, Al-Bayati A, Tjandra A, Foad MA. Optimization of fluorine co-implantation for PMOS source and drain extension formation for 65nm technology node. In: Silicon Front-End Junction Formation-Physics and Technology. 2004, San Francisco, California, USA: Materials Research Society.
• Pawlak BJ, Vandervorst W, Lindsay R, De Wolf I, Roozeboom F, Delhougne R, Benedetti A, Loo R, Caymax M, Maex K, Cowern NEB. The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer. In: Silicon Front-End Junction Formation-Physics and Technology. 2004, San Francisco, California, USA: Materials Research Society.
• Duffy R, Venezia VC, Heringa A, Husken TWT, Hopstaken MJP, Cowern NEB, Griffin PB, Wang CC. Boron uphill diffusion during ultrashallow junction formation. Applied Physics Letters 2003, 82(21), 3647-3649.
• Uppal S, Willoughby AFW, Bonar JM, Cowern NEB, Morris RJH, Bollani M. Diffusion of boron in germanium and Si1-xGex (x>50%) alloys. In: Materials Research Society Spring Meeting. 2003, San Francisco, California, USA: Materials Research Society.
• Uppal S, Willoughby AFW, Bonar JM, Evans AGR, Cowern NEB, Morris R, Dowsett MG. Diffusion of ion-implanted Boron in Germanium. Journal of Applied Physics 2001, 90(8), 4293-4295.
• Mannino G, Stolk PA, Cowern NEB, de Boer WB, Dirks AG, Roozeboom F, van Berkum JGM, Woerlee PH, Toan NN. Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon. Applied Physics Letters 2001, 78(7), 889-891.
• Uppal S, Willoughby AFW, Bonar JM, Evans AGR, Cowern NEB, Morris R, Dowsett MG. Ion-implantation and diffusion behaviour of boron in germanium. Physica B: Condensed Matter 2001, 308-310, 525-528.
• Cowern NEB, Rafferty CS. Enhanced diffusion in silicon processing. MRS Bulletin 2000, 25, 39-44.
• Mannino G, Cowern NEB, Roozeboom F, van Berkum JGM. Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon. Applied Physics Letters 2000, 76(7), 855-858.
• N.E.B. Cowern, M.J.J. Theunissen, F. Roozeboom and J.G.M. van Berkum. Boride-enhanced diffusion in silicon: bulk and surface layers. Applied Physics Letters 1999, 75, 181-183.
• N.E.B. Cowern, G. Mannino, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, J.G.M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraiz. Cluster ripening and transient enhanced diffusion in silicon. Materials Science in Semiconductor Processing 1999, 2, 369-376.
• N.E.B. Cowern, G. Mannino, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, J.G.M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraiz. Energetics of self-interstitial clusters in Si. Physical Review Letters 1999, 82, 4460-4463.
• N.E.B. Cowern, M. Jaraiz, F. Cristiano, A. Claverie, and G. Mannino. Fundamental diffusion issues for deep submicron device scaling. In: International Electron Device Meeting. 1999.
• N.E.B. Cowern, D. Alquier, M. Omri, A. Claverie, and A. Nejim. Transient enhanced diffusion in preamorphized silicon: the role of the surfac. Nuclear Instruments and Methods in Physics Research B 1999, 148, 257-261.
• Y. Mishin, G. Vogl, N.E.B. Cowern, R. Catlow, and D. Farkas, ed. Diffusion Mechanisms in Crystalline Materials. 1998.
• N.E.B. Cowern, D.C. Jacobson, and R.P. Webb, ed. Silicon Front-End Technology - Materials Processing and Modelling. 1998.
• N.E.B. Cowern, E.J.H. Collart, J. Politiek, P.H.L. Bancken, J.G.M. van Berkum, K. Kyllesbech Larsen, P. Pichler, A. Burenkov, and D.J. Gravesteijn. Low energy implantation and transient enhanced diffusion: physical mechanisms and technology implications. In: Materials Research Society Spring Meeting, San Francisco, invited paper. 1997.
• N.E.B. Cowern, W.J. Kersten, R.C.M. de Kruif, J.G.M. van Berkum, W.B. de Boer, D.J. Gravesteijn and C.W.T. Bulle-Liewma. Interdiffusion mechanisms in coherently strained SiGe multilayers. In: Fourth International Symposium on Process Physics and Modeling in Semiconductor Devices, ECS Meeting. 1996, Electrochemical Society.
• N.E.B. Cowern, A. Cacciato, J.S. Custer, F.W. Saris and W. Vandervorst. Role of C and B clusters in transient diffusion of B in silicon. Applied Physics Letters 1996, 68, 1150.
• N.E.B. Cowern, P.C. Zalm, P. van der Sluis, D.J. Gravesteijn and W.B. de Boer. Diffusion in strained Si(Ge). Physical Review Letters 1994, 72, 2585.
• N.E.B. Cowern. Interstitial traps and diffusion in epitaxial silicon films. Applied Physics Letters 1994, 64, 2646.
• N.E.B. Cowern, G.F.A. van de Walle, P.C. Zalm, and D.W.E. Vandenhoudt. Mechanisms of implant damage annealing and transient enhanced diffusion in Si. Applied Physics Letters 1994, 65, 2981.
• N.E.B. Cowern, G.F.A. van de Walle, P.C. Zalm and D.J. Oostra. Reactions of point defects and dopant atoms in silicon. Physical Review Letters 1992, 69, 116.
• N.E.B. Cowern, G.F.A. van de Walle, D.J. Gravesteijn and R. Vriezema. Experiments on atomic-scale mechanisms of diffusion. Physical Review Letters 1991, 67, 212.
• N.E.B. Cowern, K.T.F. Janssen, G.F.A. van de Walle and D.J. Gravesteijn. Impurity diffusion via an intermediate species: the B-Si system. Physical Review Letters 1990, 65, 2434.
• N.E.B. Cowern, K.T.F. Janssen and H.F.F. Jos. Transient diffusion of ion-implanted boron: dose, time and matrix dependence of atomic and electrical profiles. Journal of Applied Physics 1990, 68, 6191-6198.
• N.E.B. Cowern. Analytical description for the diffusion and recombination of point defects in silicon. Applied Physics Letters 1989, 54, 1415.
• N.E.B. Cowern. General model for intrinsic dopant diffusion in silicon, under nonequilibrium point defect conditions. Journal of Applied Physics 1988, 64, 4484.
• N.E.B. Cowern, D.J. Godfrey and D.E. Sykes. Transient enhanced diffusion of phosphorus in silicon. Applied Physics Letters 1986, 49, 1711.
• N.E.B. Cowern, P.M. Read, C.J. Sofield, L.B. Bridwell and M.W. Lucas. Charge-changing energy loss, higher-order Z1 dependent effects, and pre-equilibrium behaviour in the stopping power for energetic light ions. Physical Review A 1984, 30, 1682.
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