Publication:

A novel sensor for the direct measurement of process induced residual stress in interconnects (2003)

Author(s): Horsfall AB, dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM

  • : A novel sensor for the direct measurement of process induced residual stress in interconnects

Abstract: Residual stress in multilevel interconnects is a potential road block for the ITRS. Direct measurement of stress in interconnect tracks has been demonstrated for the first time using a rotating sensor fabricated in metallisation layers. The rotation is observable with a reflected light microscope and is compared with computer simulations using ANSYS. The structure is suitable for use in a production environment and is scalable to deep submicron features for future technology nodes. (8 References).

Notes: Franca J Freitas P Piscataway, NJ, USA. ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03. Estoril, Portugal. IEEE. EDS. Infineon Technol. ATMEL. Tower Semiconductor Ltd. 16-18 Sept. 2003.

  • Short Title: A novel sensor for the direct measurement of process induced residual stress in interconnects
  • Date: 16-18 September 2003
  • Conference Name: 33rd European Solid-State Device Research
  • Pages: 115-118
  • Publisher: IEEE
  • Publication type: Conference Proceedings (inc. abstract)
  • Bibliographic status: Published