Publication:
Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors (2005)
Author(s): Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK
- Journal: Journal of Applied Physics
- Volume: 97
- Issue: 11
- Pages: 1-9
- Publisher: American Institute of Physics
- Publication type: Article
- Bibliographic status: Published