Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors (2005)

Author(s): Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK

      • Journal: Journal of Applied Physics
      • Volume: 97
      • Issue: 11
      • Pages: 1-9
      • Publisher: American Institute of Physics
      • Publication type: Article
      • Bibliographic status: Published

      Professor Steve Bull
      Cookson Group Chair of Eng Materials