Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface (2006)

Author(s): Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Driscoll LS, Tsang YL, Agaiby R, Escobedo-Cousin E

      • Date: 4-6 January 2006
      • Conference Name: International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS)
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

        Professor Anthony O'Neill
        Siemens Professor of Microelectronics

        Dr Sarah Olsen
        Senior Lecturer