Publication:

B profile alteration by annealing in reactive ambients (2009)

Author(s): Pawlak BJ, Cowern NEB, Vandervorst W

      • Date: 12-01-2009
      • Journal: Applied Physics Letters
      • Volume: 94
      • Issue: 2
      • Pages: 022104
      • Publisher: American Institute of Physics
      • Publication type: Article
      • Bibliographic status: Published

      Keywords: annealing boron desorption elemental semiconductors fluorine interstitials ion implantation silicon surface diffusion TRANSIENT ENHANCED DIFFUSION BORON-DIFFUSION SILICON FLUORINE SI MECHANISMS CARBON

      Staff

      Professor Nick Cowern
      Professor of Nanoscience / Nanotechnology