Publication:

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics (2010)

Author(s): Alatise OM, Olsen SH, O'Neill AG

      • Date: 25-01-2010
      • Journal: Solid State Electronics
      • Volume: 54
      • Issue: 6
      • Pages: 628-634
      • Publisher: Pergamon
      • Publication type: Article
      • Bibliographic status: Published
      Staff

      Professor Anthony O'Neill
      Siemens Professor of Microelectronics