Publication:
Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices (2010)
Author(s): Agaiby RMB, Olsen SH, Eneman G, Simoen E, Augendre E, O'Neill AG
- Date: 29-03-2010
- Journal: IEEE Electron Device Letters
- Volume: 31
- Issue: 5
- Pages: 419-421
- Publisher: IEEE
- Publication type: Article
- Bibliographic status: Published