Publication:

Energetics and vibrational frequencies of interstitial H2 molecules in semiconductors (1999)

Author(s): C. G. Van de Walle and J. P. Goss

  • : Energetics and vibrational frequencies of interstitial H-2 molecules in semiconductors

Abstract: We report a comprehensive investigation of the incorporation of H-2 molecules in semiconductors. We consider five different materials (Si, GaAs, InAs, GaP and GaN), and use a density-functional-pseudopotential approach. Combined with calculations for H-2 in vacuum, these results enable us to examine trends and develop an understanding of the physics of incorporation of a strongly bound molecule in a semiconducting environment. We find that the vibrational frequency of the interstitial molecules is shifted down significantly compared to the free molecule. We also investigate anharmonicity in the molecular vibrations. The results confirm a recent assignment of Raman lines to interstitial H-2 in GaAs, but contradict an assignment claiming that the frequency for H-2 in Si is close to the free-molecule value. Finally, we calculate and discuss diffusion of H-2 molecules through a Si crystal. (C) 1999 Elsevier Science S.A. All rights reserved.

  • Short Title: Energetics and vibrational frequencies of interstitial H-2 molecules in semiconductors
  • Date: Feb 12
  • Journal: Materials Science and Engineering B-Solid State Materials for Advanced Technology
  • Volume: 58
  • Issue: 1-2
  • Pages: 17-23
  • Publication type: Article
  • Bibliographic status: Published

Keywords: semiconductors; H-2 molecules; vibrational frequency hydrogen molecules; crystalline silicon; gaas; pseudopotentials; defects; si

Staff

Dr Jonathan Goss
Lecturer