Publication:
Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors (2008)
Author(s): Fobelets K, Rumyantsev SL, Shur MS, Olsen SH
Notes: Article no. 044501
4 pages
- Journal: Journal of Applied Physics
- Volume: 103
- Issue: 4
- Pages: 044501
- Publisher: American Institute of Physics
- Publication type: Article
- Bibliographic status: Published