Mechanistic model for oxidation of SiC (1999)

Author(s): O'Neill AG; Johnson CM; Wright NG

      • Date: 2-4 September 1998
      • Conference Name: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98)
      • Volume: 61-62
      • Pages: 468-471
      • Publisher: Elsevier
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

      Keywords: SiC oxidation rate OXYSIM


      Professor Anthony O'Neill
      Siemens Professor of Microelectronics