Publication:

Structure and electronic properties of nitrogen defects in silicon (2004)

Author(s): Jones R, Hahn I, Goss JP, Briddon PR, Oberg S

      • Date: 21-26 September 2003
      • Conference Name: Gettering and Defect Engineering in Semiconductor Technology (Gadest) Proceedings of the 10th International Autumn Meeting
      • Volume: 95-96
      • Pages: 93-98
      • Publisher: Scitec Publications Ltd.
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

        Keywords: nitrogen silicon IMPLANTED SILICON DEEP-LEVEL DIFFUSION IDENTIFICATION AGGREGATION COMPLEXES CENTERS OXYGEN ATOMS SI