Publication:
Structure and electronic properties of nitrogen defects in silicon (2004)
Author(s): Jones R, Hahn I, Goss JP, Briddon PR, Oberg S
- Date: 21-26 September 2003
- Conference Name: Gettering and Defect Engineering in Semiconductor Technology (Gadest) Proceedings of the 10th International Autumn Meeting
- Volume: 95-96
- Pages: 93-98
- Publisher: Scitec Publications Ltd.
- Publication type: Conference Proceedings (inc. abstract)
- Bibliographic status: Published
Keywords: nitrogen
silicon
IMPLANTED SILICON
DEEP-LEVEL
DIFFUSION
IDENTIFICATION
AGGREGATION
COMPLEXES
CENTERS
OXYGEN
ATOMS
SI