TCAD evaluation of double implanted 4H-SiC power bipolar transistors (1999)

Author(s): Adachi K, Johnson CM, Ortolland S, Wright NG, O'Neill AG

      • Date: 2000
      • Journal: Materials Science Forum: Silicon Carbide and Related Materials 1999
      • Volume: 338-342
      • Pages: 1419-1422
      • Publisher: Trans Tech Publications
      • Publication type: Article
      • Bibliographic status: Published

      Keywords: 4H-SiC bipolar transistor simulation


      Professor Anthony O'Neill
      Siemens Professor of Microelectronics