Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures (2003)

Author(s): Norris DJ, Cullis AG, Olsen SH, O'Neill AG, Zhang J

      • Date: 31 March 2003
      • Conference Name: Microscopy of Semiconducting Materials: Conference on Microscopy of Semiconducting Materials
      • Volume: 180
      • Pages: 389-392
      • Publisher: Institute of Physics Publishing
      • Publication type: Conference Proceedings (inc. abstract)
      • Bibliographic status: Published

        Keywords: PERFORMANCE


        Professor Anthony O'Neill
        Siemens Professor of Microelectronics

        Dr Sarah Olsen
        Senior Lecturer